Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

Abstract

Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0±0.5)×107 cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm.

Optical studies of high-field carrier transport of InN thick film grown on GaN

“…Hence, more low- The electric field intensity has been estimated from a way similar to Ref. [2]. The photoexcited electron-hole pair density is n ffi 5 Â 10 18 cm À3 .…”

“…The electric field intensity has been deduced from a method similar to that described in Ref. [2], in which the electric field intensity is obtained by comparing the measured electron drift velocity with those calculated by ensemble Monte Carlo simulations. The electron distribution has been found to shift toward the ÀẼ direction, as expected.…”

“…Recent electron transport measurements have shown that steady-state electron drift velocity as high as 5 Â 10 7 cm/s can be achieved in InN at T ¼ 300 K [2]. The transient electron transport, which is expected to govern the transport mechanism in nanostructure devices [3][4][5][6][7], has been studied by Monte Carlo simulations in InN (although for the earlier estimate of a bandgap of 1.89 eV, and other values corresponding to this) [8][9][10].…”

Transport and mobility properties of wurtzite InN and GaN

“…The validity of the new bandgap value is also doubtful according to a more recent study [18]. Therefore the electron transport characteristics and lowfield mobilities in InN have been studied widely during the past few years [19][20][21]. The theoretical estimates for low field mobility with undoped InN have reached about 14000 cm 2 /V s at room temperature [22], whereas the highest measured mobilities of InN were above 2000 cm 2 /V s [23][24][25][26].…”

Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well

“…The electron transport characteristics of InN have been studied [15][16][17] and during the past few years electron low-field mobilities in InN above 2000 cm 2 / V s have been measured. [18][19][20][21] The best reported mobility of InN at room temperature was about 3500 cm 2 /V s. 19 Recent theoretical estimates for low-field mobility with undoped InN have reached about 14,000 cm 2 /V s at room temperature.…”