Field-induced diverse quantizations in monolayer and bilayer black phosphorus

Abstract

Electronic properties of few-layer phosphorenes are investigated by the generalized tight-binding model. They are greatly diversified by the electric and magnetic fields (E z and B z ). The E z -induced gap transition, Dirac cones, oscillatory bands and critical points are present in bilayer system, but absent in monolayer one. The diverse magnetic quantization phenomena cover the coexistent two subgroups of Landau levels, the uniform and non-uniform energy spacings, and the crossing and anti-crossing behaviors. Specifically, the wavefunctions exhibit the dramatic changes between the well-behaved and multi-mode oscillations. The feature-rich energy spectra are reveled in density of states as .many special structures which could be verified from scanning tunneling spectroscopy.

The diverse magneto-optical selection rules in bilayer black phosphorus

“…This arises from a competitive or cooperative relation between the intralayer and interlayer atomic interactions and the Coulomb potential energy. The strong electrically tunable energy bands enrich the quantization phenomena under a uniform perpendicular magnetic field ( B z ), including two subgroups of Landau levels (LLs), uniform and non-uniform LL energy spacings and frequent crossings and anti-crossings 31 . There exist dramatic changes in the sub-envelope functions for the two mixed LLs with anti-crossing behaviors.…”

Unusual features of nitrogen substitutions in silicene

“…Firstprinciples calculations show that the low-energy electronic states could be approximated by modied Dirac cones [the p chemical bonding] for the carbon-and boron-substituted silicene systems, but not for the nitrogen-containing ones. As to the former, a generalized tight-binding model is available for thorough investigations of the unique magnetic quantizations, 67 the rich magneto-optical absorption spectra, the unusual quantum Hall conductivities, 68 and the various magneto-plasmon modes. 69 Very interestingly, the modulation of the free hole densities by variation of the boron concentration is capable of creating diverse essential properties, 70 but for nitrogen substitutions, the multi-orbital hopping integrals might be too complicated to calculate and the tight-binding model cannot t the VASP band structures well along the high-symmetry points.…”

Rich p -type-doping phenomena in boron-substituted silicene systems

“…According to previous studies, the essential properties are easily modulated by important factors, i.e. they are quite sensitive to changes of the lattice symmetries [ 25 ], layer [ 26 ], sequence stacking configurations [ 27 ], gate voltages [ 28 ], magnetic fields [ 29 ], mechanical strains [ 30 ] and chemical reactions [ 31 ].…”