Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

Matsuzaki, Kosuke; Yanagi, Hiroshi; Kamiya, Toshio; Hiramatsu, Hidenori; Nomura, Kenji; Hirano, Masahiro; Hosono, Hideo

doi:10.1063/1.2179373

Cited by 142 publications

(82 citation statements)

References 22 publications

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“…[36] Ga-doped zinc oxide (ZnO:Ga, GZO) is a wellknown n-type TCO material. [37] Thin films of gallium oxide have been prepared by various methods: (radiofrequency) magnetron sputter deposition, [1][2][3][4]6,7,9,10,12,25,27] electron beam evaporation, [15][16][17]21] pulsed laser deposition, [26,28,30,33,34,36] laser ablation, [31] CVD, [38][39][40][41][42][43][44][45][46][47] ALD, [48][49][50][51][52] molecular beam epitaxy, [32,35] vapor phase epitaxy, [53] spray pyrolysis, [54,55] and sol-gel process. [5,13,23,24] Among these methods, CVD is considered very important because it can readily be employed in industrial processes.…”

Section: Introductionmentioning

confidence: 99%

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Lee

Kim

Woo

et al. 2011

Chemical Vapor Deposition

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Thin films of gallium oxide (Ga 2 O 3 ) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal-organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non-pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280-300 8C with a growth rate of $0.3 Å per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga 2 O 3 , films are grown in the temperature range 450-6258C with the apparent activation energy of 225.5 kJ mol À1. This study shows that DMGIP can be utilized as a new source for the preparation of Ga 2 O 3 thin films.

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Section: Introductionmentioning

confidence: 99%

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Lee

Kim

Woo

et al. 2011

Chemical Vapor Deposition

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“…Therefore, the films based on β-Ga 2 O 3 are widely used as thin film materials for field effect transistors (FET) [1], gas sensors [2] and electrodes, transparent in the UV region [3]. Depending on the method of obtaining and the dopant, such films are used as photoluminophors [4,5], cathodoluminophors and electroluminophors [6,7].…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Thermally Stimulated Luminescence of β -Ga₂O₃Thin Films

et al. 2018

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Thermally stimulated luminescence of X-ray irradiated β-Ga2O3 thin films was investigated. An analysis of the form of the elementary contours making the thermally stimulated luminescence curves shows that recombination processes at the thermally stimulated luminescence peaks with maxima at 77, 135, 178, and 235 K in thin films of β-Ga2O3 are described in terms of linear kinetics. The spectral composition of the thermally stimulated luminescence of the thin films was studied. Some methods are employed to determine the activation energies and frequency factors corresponding to the thermally stimulated luminescence peaks. It is established that the recombination processes occurring upon release of the trapping centers in thin films β-Ga2O3 are conditioned by diffusion-controlled tunneling recombination due to thermally-stimulated migration of V k -centers.

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“…It is important also for practical applications because such materials will allow us to integrate power devices with large-size glass and flexible substrates. β-Ga 2 O 3 is a crystalline semiconductor with an ultra-wide bandgap of~4.9 eV 3 and has recently been examined for applications in deep-ultraviolet devices 4 and power devices. 5 Although carrier doping in β-Ga 2 O 3 has been difficult, as recently explained by theoretical calculations, 6 impurity doping using Sn or Si has been discovered to attain electronic conduction, 1,7 which has widened the range of applications of β-Ga 2 O 3 , for example, to power devices.…”

Section: Introductionmentioning

confidence: 99%

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

et al. 2017

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The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga 2 O 3 is known as a transparent conducting oxide with an ultra-wide bandgap of~4.9 eV, but amorphous (a-) Ga 2 O x is just an electrical insulator because the combination of an ultra-wide bandgap and an amorphous structure has serious difficulties in attaining electronic conduction. This paper reports semiconducting a-Ga 2 O x thin films deposited on glass at room temperature and their applications to thin-film transistors and Schottky diodes, accomplished by suppressing the formation of charge compensation defects. The film density is the most important parameter, and the film density is increased by enhancing the film growth rate by an order of magnitude. Additionally, as opposed to the cases of conventional oxide semiconductors, an appropriately high oxygen partial pressure must be chosen for a-Ga 2 O x to reduce electron traps. These considerations produce semiconducting a-Ga 2 O x thin films with an electron Hall mobility of~8 cm 2 V − 1 s − 1 , a carrier density N e of~2 × 10 14 cm − 3 and an ultra-wide bandgap of~4.12 eV. An a-Ga 2 O x thin-film transistor exhibited reasonable performance such as a saturation mobility of~1.5 cm 2 V − 1 s − 1 and an on/off ratio 410 7 .

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Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

Cited by 142 publications

References 22 publications

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Microstructure and Thermally Stimulated Luminescence of β -Ga₂O₃Thin Films

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

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Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

Cited by 142 publications

References 22 publications

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

Microstructure and Thermally Stimulated Luminescence of β -Ga2O3Thin Films

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

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ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Microstructure and Thermally Stimulated Luminescence of β -Ga₂O₃Thin Films