2009
DOI: 10.1103/physrevlett.103.116801
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Field-Induced Carrier Delocalization in the Strain-Induced Mott Insulating State of an Organic Superconductor

Abstract: We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br. Conductivity obeys the formula for an activated transport sigma(square)=sigma(0)exp(-W/k(B)T), where sigma(0) is a constant and W depends on the gate voltage. The gate-voltage dependence of the Hall coefficient shows that, unlike in conventional field-effect transistors, the effective mobility of dense hole carriers ( a… Show more

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Cited by 49 publications
(37 citation statements)
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“…Different from the nearly-free electrons, the bands of correlated electrons are not strictly rigid but somewhat "soft" [13][14][15] , which may lead to emergent phenomena beyond the simple band theory. In this work, the (YFeO 3 ) n /(YTiO 3 ) n superlattices have been studied using the density functional theory (DFT).…”
Section: Introductionmentioning
confidence: 99%
“…Different from the nearly-free electrons, the bands of correlated electrons are not strictly rigid but somewhat "soft" [13][14][15] , which may lead to emergent phenomena beyond the simple band theory. In this work, the (YFeO 3 ) n /(YTiO 3 ) n superlattices have been studied using the density functional theory (DFT).…”
Section: Introductionmentioning
confidence: 99%
“…(2). Finally, the fitting is square-rooted in order to compare with the linear spectrum obtained by the re-flectivity.…”
Section: Resultsmentioning
confidence: 99%
“…Some of the Mott insulating single crystals show the phase transition to metal or to superconducting phases by changing temperature and/or pressure [1], by applying electric field [2], by electric current [3], or by photo-irradiation [4]. To make these molecular crystals work as (photo-switchable) memory devices, the electric conductivity at the surface has to be controlled, like semiconductor-based devices.…”
Section: Introductionmentioning
confidence: 99%
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“…[14][15][16] In this study, we performed carrier doping of the organic Mott insulator complex ET-F 2 TCNQ (ET ¼ bis(ethylenedithio)tetrathiafulvalene, F 2 TCNQ ¼ 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane) crystal surface by contact with TTF. Enhanced conductivity was observed, and the surface was subjected to atomic force microscopy (AFM) and Raman measurements.…”
mentioning
confidence: 99%