Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn3Sn/[Pt/Co]4 heterostructure

Lu, YingYing; Xu, Yang; Zheng, Kun; Wang, Yangping; Lin, HaoYu; Li, Zheng; Shang, Tian; Zhan, QingFeng

doi:10.1016/j.jmmm.2024.172221

Journal of Magnetism and Magnetic Materials

2024

DOI: 10.1016/j.jmmm.2024.172221

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Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn3Sn/[Pt/Co]4 heterostructure

YingYing Lu,

Yang Xu,

Kun Zheng

et al.

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2024

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High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

Song,

Wang,

Xing

et al. 2024

Applied Physics Letters

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Electrical manipulation of the antiferromagnetic states of Weyl semimetal Mn3Sn by current-induced spin–orbit torque (SOT) has attracted intensive attention recently, largely due to its potential advantage for high-density integration and ultrafast operation. In this study, the relation between the antiferromagnetic SOT switching ratio and the composition of Mn3+xSn1−x films was explored systematically. While SOT manipulation of ferromagnetic order has traditionally been confined to films just a few nanometers in thickness, our results indicate that current-induced SOT can effectively switch the antiferromagnetic order of sputtered Mn3+xSn1−x films with a thickness of up to 100 nm. Notably, a high electrical switching ratio of 83% was obtained in the optimized film with a composition of Mn3.1Sn0.9. The switching of the octupole polarization in thick Mn3Sn films may be accounted for by a seeded SOT mechanism. Joule heating of the Mn3Sn film close to the Néel temperature plays a key role in this switching process. Additionally, the factors influencing the switching ratio were further investigated. This work will deepen our understanding of the electrical switching mechanism of non-collinear antiferromagnetic order in Mn3Sn film and promote the development of antiferromagnetic spintronic devices.

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High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

Song,

Wang,

Xing

et al. 2024

Applied Physics Letters

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show abstract

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Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn3Sn/[Pt/Co]4 heterostructure

Cited by 1 publication

References 37 publications

High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

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