Field-Free Spin–Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer
Miao Jiang,
Xinyuan Yang,
Shengyuan Qu
et al.
Abstract:Current-induced spin−orbit torque (SOT) in a perpendicularly magnetized single layer has a strong potential to switch the magnetization using an extremely low current density, which is generally 2−3 orders of magnitude smaller than that required for conventional metal bilayer systems. However, an inplane external magnetic field has to be applied to break the symmetry and achieve deterministic switching. To further enhance the high-density integration and accelerate the practical application of highly efficient… Show more
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