Field emission studies of pulsed laser deposited films on W and Re

Growth of Large‐Scale Boron Nanowire Patterns with Identical Base‐Up Mode and In Situ Field Emission Studies of Individual Boron Nanowire

“…From Table , it is concluded that patterned BNWs have a turn‐on field of 4.3 V/μm (at 10 μA/cm 2 emission current density) and a threshold field of 10.4 V/μm (at 1 mA/cm 2 emission current density), which are comparable to many excellent cathode nanomaterials (ZnO nanowires, WO 3 nanowires and AlN nanowires etc.) except the CNTs, graphene and LaB 6 materials with very excellent FE properties . And they have better FE performance than the boron nanowires produced by other methods, as seen from Table .…”

Excellent Field‐Emission Performances of Neodymium Hexaboride (NdB6) Nanoneedles with Ultra‐Low Work Functions

“…Rare‐earth hexaboride (REB 6 ) nanostructures are ideal materials for FE application as an electrical field‐induced ion and electron point source due to their miniature dimensions, low work functions, as well as excellent electrical, thermal, and mechanical properties . The advantages of using REB 6 as a FE candidate originate from their crystal structure, in which the rare‐earth metal atom is embedded inside a stable boron octahedral network.…”

Buffer-layer-enhanced growth of a single-domain LaB6 (1 0 0) epitaxial thin film on a MgO (1 0 0) substrate via pulsed laser deposition

“…Since the interest in using LaB 6 in cold cathodes is on the rise in recent years, there have been some attempts to prepare LaB 6 nanowires via chemical vapor deposition [18], LaB 6 polycrystalline thin films via sputtering [19,20], e-beam evaporation [21], and pulsed laser deposition (PLD) [16,[22][23][24], and LaB 6 epitaxial thin films via e-beam evaporation [25]. Previously, we investigated the epitaxial growth of functional LaB 6 and SrB 6 thin films on ultrasmooth sapphire (a-Al 2 O 3 single crystal) (0 0 0 1) substrates [26][27][28].…”