2009
DOI: 10.1063/1.3056180
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Field emission properties of Si tip arrays coated with N-doped SrTiO3 thin films at different substrate temperature

Abstract: Articles you may be interested inEffect of nitrogen addition on the band gap, core level shift, surface energy, and the threshold field of electron emission of the SrTiO 3 thin films Electron emission from silicon tips coated with sol-gel ( Ba 0.67 Sr 0.33 ) Ti O 3 ferroelectric thin filmThe effect of substrate temperature ͑T S ͒ on the behavior of field emission, microstructure, optical band gap, and the surface energy of N-doped SrTiO 3 thin films coated on silicon tip arrays has been examined in detail. Res… Show more

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Cited by 5 publications
(4 citation statements)
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References 30 publications
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“…For example, the presence of antibonding dipoles lowers the work functions drastically by more than 1 eV, 92 which greatly aids electron emission for imaging and display. [93][94][95] The nitrogenation of diamond and carbon nanotubes, the oxidation and fluorination of metals, etc., have all been widely used in industrial sectors. It is expected that proper doping of N, O and F to the surface of low workfunction metals could be beneficial to the field emission.…”
Section: Principle: Lone Pair and Dipole Creationmentioning
confidence: 99%
“…For example, the presence of antibonding dipoles lowers the work functions drastically by more than 1 eV, 92 which greatly aids electron emission for imaging and display. [93][94][95] The nitrogenation of diamond and carbon nanotubes, the oxidation and fluorination of metals, etc., have all been widely used in industrial sectors. It is expected that proper doping of N, O and F to the surface of low workfunction metals could be beneficial to the field emission.…”
Section: Principle: Lone Pair and Dipole Creationmentioning
confidence: 99%
“…Together with the low turn-on field and high current density described above, the current Au/Si-NC core-shells can be regarded as excellent field emitters and should be of great potential for various field emissionassociated applications. Compared to the field emission characteristics collected from the literature reported for varieties of Si-related nanostructures (Table 1), 6,[18][19][20]23 it is evident that the Pt/Si-NC and Au/Si-NC structures presented in this study outperform most of them by a large margin, except for the very low turn-on field observed in ZnO/Si-NPs. 20 However, it is noted here that in the ZnO/Si-NPs 20 the average tip radius of the Si-NPs was only about 15 nm compared to B30 nm in the present case.…”
Section: Resultsmentioning
confidence: 45%
“…In order to improve the field emission properties of Si-NSs, various approaches were developed. [7][8][9][10][11][12][13][14][15][16][17] For instance, various ferroelectric oxides 18,19 have been coated on the pre-fabricated Si-NSs in trying to take the advantage of low electron affinity and polarization induced electric fields at the interface, both are conceived to be beneficial to electron emissions. Alternatively, semiconductor thin films grown by atomic layer deposition (ALD) 20 were coated onto the Si-NSs to improve their field emission characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…[ 12–22 ] Because SrTiO 3 has the advantages of excellent photoelectric performance of perovskite material and stability of inorganic material, it also shows great development potential in the field of field emission (FE). [ 23–25 ]…”
Section: Introductionmentioning
confidence: 99%