Field-emission properties of self-assembled Si-capped Ge quantum dots

Lee, S.W.; Chueh, Yu‐Lun; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, Li‐Wei; Liu, C.W.

doi:10.1016/j.tsf.2005.08.397

Cited by 4 publications

(5 citation statements)

References 17 publications

(12 reference statements)

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“…The obtained results agree qualitatively with X-TEM images of capped SiGe rings 11 and are also compatible with compositional values deduced from X-TEM combined with an EDS analysis. 8,10 Finally, the average Ge content is about 27%, which is compatible with the average Ge content deduced from x-ray measurements ͑24%͒. The maximum Ge content also agrees quite well for both x ray ͑34%͒ and selective wet chemical etching experiments ͑35%͒.…”

supporting

confidence: 84%

Composition and strain in SiGe/Si(001) “nanorings” revealed by combined x-ray and selective wet chemical etching methods

Stoffel

Malachias

Rastelli

et al. 2009

Applied Physics Letters

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The authors used x-ray diffraction to investigate strain and composition in SiGe nanorings formed during partial Si capping of self-assembled SiGe/Si(001) islands. The obtained results are corroborated with selective wet chemical etching experiments. Clear evidence is provided that rings are composed of a Ge rich core surrounded by Si richer ridges indicating that a substantial material redistribution occurs during the shape transformation from SiGe islands to rings. The results suggest that SiGe ring formation is driven by strain relief.

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supporting

confidence: 84%

Composition and strain in SiGe/Si(001) “nanorings” revealed by combined x-ray and selective wet chemical etching methods

Stoffel

Malachias

Rastelli

et al. 2009

Applied Physics Letters

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“…In addition, by normalizing the turn-on field of the similar reference samples ͑as-grown Ge islands͒, the Si pyramidal tips also exhibit a lower turn-on field than that of Sicapped Ge islands in the previous study ͑6.5 V m −1 ͒. 16 The turn-on voltage highly depends on the sharpness of the field emitters. A higher aspect ratio of the Si pyramidal tips, compared with the as-grown Ge islands, accounts for the improved turn-on field.…”

Section: Resultsmentioning

confidence: 86%

“…The Si pyramidal tips are expected to exhibit improved field emission characteristics because they have a much higher aspect ratio compared to self-assembled Ge nanodots. 16 However, after further etching for 60 s, the Si pyramidal tips tended to shrink or even disappear, as shown in Fig. 1f.…”

Section: Resultsmentioning

confidence: 90%

“…15 In the previous study, we also demonstrated the improved field emission properties in Si-capped Ge islands. 16 This work, taking advantage of the relatively low etching rate and uniform size of self-assembled Ge islands, proposes a low cost method to fabricate nanoscale Si field emitters over a large area. The selfassembled Ge islands act as virtual nanomasks for the underlying Si substrate during selective chemical etching.…”

mentioning

confidence: 99%

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Fabrication of Nanometer-Scale Si Field Emitters Using Self-Assembled Ge Nanomasks

Lee

Chang

2010

J. Electrochem. Soc.

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Large-area, nanometer-scale Si field emitters have been fabricated by selective chemical etching of self-assembled Ge islands on Si. Taking advantage of the relatively low etching rate, uniform Ge islands act as virtual nanomasks for the underlying Si substrate. During selective chemical etching, Ge nanomasks shrink into small Ge-core islands, which determine the apex sharpness of the resulting Si pyramidal tips. The results demonstrate that Si pyramidal tips exhibited improved antireflective and electron field emission characteristics compared to as-grown Ge islands. The high field enhancement factor can be attributed to high tip density, nanoscale apex, and well-controlled spacing between Si pyramidal tips. This work offers a low cost alternative for designing and fabricating high efficiency Si-based field emitters or nanodevices.

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“…Strain-induced self-assembled Ge quantum dots (QDs) on Si(001) have attracted considerable interest for the promising applications in future optoelectronic devices compatible with Si technology [1][2][3]. Ge-QD modulators and photodetectors have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%