“…[1][2][3][4] Even though ZnO is an attractive material for diverse applications in solar cells, catalysis, sensing, photocatalysis, smart windows, photoluminescence, supercapacitors, generators etc., and is even more suitable for ultraviolet light emitters and laser diodes, 4,5 it has only been moderately considered for use in FE displays because of its larger work function in the range of 5.3 to 5.6 eV, limited morphological forms and eld screening effect from uncontrolled dispersion. [6][7][8][9] Therefore, emerging approaches to tailor the work function and improve electron emission such as the modication of emitter geometry, the introduction of impurity, decoration of metals and the vertical alignment of the structures have been reported. 2,10 The implantation of elements into ZnO nanowires was found to produce nanoscale protuberances and surface-related defects which reduced the turn-on eld (E on ) from 3.1 to 2.4 V mm À1 (at 0.1 mA cm…”