Field emission measurements with μm resolution on CVD-polycrystalline diamond films

Pupeter, N.; Gohl, A.; Habermann, T.; Mahner, E.; Piel, H.; Niedermann, Ph.; Hänni, W.

doi:10.1109/ivmc.1995.487052

Cited by 4 publications

(6 citation statements)

References 5 publications

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“…[8][9][10][11][12] Many of these studies dealt with the characterization of local electronic properties. Only a few papers have reported on the relationship between microstructure and electron emission properties.…”

mentioning

confidence: 99%

“…Only a few papers have reported on the relationship between microstructure and electron emission properties. 10,11 However, no direct observation has been carried out to identify the exact electron emission sites in diamond films. It is necessary to understand the relationship between the electron emission and the microstructure for comprehensive understanding of the emission mechanism.…”

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confidence: 99%

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Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Kim

Choi

Wakimoto

et al. 1999

Applied Physics Letters

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Articles you may be interested inScanning tunneling microscopy observations of hafnium carbide thin films as a field emission material J. Vac. Sci. Technol. B 23, 741 (2005); 10.1116/1.1849192 Current image tunneling spectroscopy of boron-doped nanodiamonds J. Appl. Phys. 97, 044312 (2005); 10.1063/1.1834722 Development of an in situ ultra-high-vacuum scanning tunneling microscope in the beamline of the 15 MV tandem accelerator for studies of surface modification by a swift heavy ion beam Rev. Sci. Instrum. 72, 3884 (2001);

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confidence: 99%

mentioning

confidence: 99%

Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Kim

Choi

Wakimoto

et al. 1999

Applied Physics Letters

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“…A connected preparation chamber separates transfer, gas exposure and heating of samples. 4,8,10 The average procedure per film was in general as follows: at ten arbitrary sites U(z), then alternating U(z) and I(E) measurements before and after I processing ͑Iϭ10 A͒ at ten other sites. 9 The FESM consists of flat ͑лр1 mm͒ and tipped W anodes ͑radii у100 nm͒, a fast high-voltage regulation ͑р35 kV͒, and a x-y-z micromanipulator ͑step width: 63.5 nm͒.…”

Section: Methodsmentioning

confidence: 99%

“…High-resolution field emission ͑FE͒ measurements showed that the strong FE found in more integral measurements 2,3 was most likely due to local defects and surface contamination, 4 which is not suitable for FED cathodes. High-resolution field emission ͑FE͒ measurements showed that the strong FE found in more integral measurements 2,3 was most likely due to local defects and surface contamination, 4 which is not suitable for FED cathodes.…”

Section: Introductionmentioning

confidence: 99%

Modifying chemical vapor deposited diamond films for field emission displays

Habermann

Gohl

Nau

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition J.A systematic investigation of deposition parameters and post-treatments was performed for the development of field emission displays based on flat chemical vapor deposited diamond films. The lowest onset field strengths were obtained for films grown at the highest substrate temperature, highest methane content, and with negatively biased substrate. Intentionally damaging the films by implantation with 50 keV and 100 keV carbon ions as well as with 4.4 MeV silicon ions usually resulted in an enhanced field emission. The emission followed the Fowler-Nordheim law up to 0.5 mA/mm 2 , and a current carrying ability of more than 100 mA/mm 2 was detected. Considerably improved emission was achieved by short and long-term processing at higher current levels.

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“…5 for the parameters listed in Table IV. The choices in parametric values endeavor to replicate the literature: The work function of 4.0 eV is analogous to Geis et al and Pupeter et al 42 Variation in the work function down to 2 eV follows Choi et al 43 and Lerner et al Temperature is room temperature. These observations are borne out in simulations and displayed in Fig.…”

Section: E Simulation Of Current-voltage Characteristicsmentioning

confidence: 99%

Advanced emitters for next generation rf amplifiers

Jensen

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Next generation rf amplifiers, in particular the inductive output amplifiers ͑IOAs͒, will require electron sources characterized by high current density, high brightness, low emittance, and the ability to be emission gated. The strong interaction between the beam and the resonant or synchronous electromagnetic field may enable compact, highly efficient, and moderate gain X-band power booster amplifiers. An analysis of amplifier demands on generic emitter candidates is provided. Of the emitter candidates available, two ͑namely, field emitter arrays and wide-band-gap semiconductors͒ are amenable to an analysis predicated on a simple model of field emission from hyperbolas and ellipsoids. The simple model is used to investigate two problems of critical concern: for field emitter arrays ͑FEAs͒, we will investigate the conditions under which important space charge effects exist, and from the model predict optimum FEA performance characteristics for rf IOAs; for wide-band-gap materials, the simple model identifies parameters which limit the maximum electron transport across a metal-semiconductor interface, thereby limiting current flow.

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Field emission measurements with μm resolution on CVD-polycrystalline diamond films

Cited by 4 publications

References 5 publications

Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Modifying chemical vapor deposited diamond films for field emission displays

Advanced emitters for next generation rf amplifiers

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