Field Emission from Polycrystalline GaN Grown on Mo Substrate

Yamanaka, T.; Tampo, Hitoshi; Yamada, K.; Ohnishi, K.; Hashimoto, Masahiko; Asahi, H.

doi:10.1002/pssc.200390090

Cited by 9 publications

(13 citation statements)

References 11 publications

(13 reference statements)

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“…The turn-on field obtained from the J-E curve shown in Figure 4 is estimated to 5.1 V/µm, lower than the previously reported turn-on fields of ∼6.1 or 12 V/µm for undoped GaN nanowires and that of ∼6.4 V/µm for polycrystalline bulk GaN. [20][21][22] Compared to the undoped GaN nanowires reported previously, 19 the P-doped GaN nanowires have larger diameters. Our intensive experiments also indicated that there is little difference in the film thickness and density for the doped/undoped GaN films.…”

Section: Resultsmentioning

confidence: 71%

Excellent Field-Emission Properties of P-Doped GaN Nanowires

et al. 2005

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GaN nanowires with P doping were synthesized via a simple thermal evaporation process. The P-doped GaN nanowires have average diameters of approximately 100 nm and lengths up to tens of micrometers. Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires. Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/mum, holding promise of application as an electron emitter. The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires.

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Section: Resultsmentioning

confidence: 71%

Excellent Field-Emission Properties of P-Doped GaN Nanowires

et al. 2005

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“…For the polycrystalline GaN grown on Mo substrates, the field enhancement factor ␥ was 210. 13 Clearly, the GaN nanorod sample exhibits a much larger ␥ value because of the geometrical configurations of sharp tip-like structures on top of nanorods observed in the XTEM image. The field enhancement factor of 1270 for the GaN nanorod sample is somewhat smaller than those of CNTs ͑1000-50 000͒, 1,2 tetrapot-like ZnO nanostructures ͑6285͒, 3 and ZnO nanofibers ͑2991͒.…”

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confidence: 95%

“…[9][10][11][12] To date, we have reported that the polycrystalline GaN grown on Mo substrates by molecular beam epitaxy ͑MBE͒ exhibits good field emission characteristics because of both low electron affinity and their grain structures. 13,14 Compared with CNT-and ZnO-based nanostructures, the field enhancement factor was lower and the resultant turn-on electric field was higher. We also reported the MBE growth of polycrystalline GaN columns on quartz glass substrate with their c axis perpendicular to the substrate surface.…”

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confidence: 97%

Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides

Yamashita

Hasegawa

Nishida

et al. 2005

Applied Physics Letters

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GaN nanorod films have been grown on Si(001) substrates with native silicon oxides by radio-frequency plasma-enhanced molecular beam epitaxy. GaN nanorod films are made up of single-crystalline nanorods with a so-called (0001) fiber-like texture. Each nanorod is elongated along c axis in perpendicular to the substrate surface and has no preferential axis in film plane. Excellent electron field emission characteristics were observed for the fabricated GaN nanorod films with a field emission threshold as low as 1.25V∕μm at a current density of 0.1μA∕cm2 and a field emission current density as high as 2.5mA∕cm2 at an applied field of 2.5V∕μm. These excellent characteristics are attributed to the geometrical configuration of nanorods and their good crystalline quality as well as the low electron affinity of GaN.

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“…In addition, GaN powders themselves could be used as high quality phosphors. GaN has low electron affinity of 2.7-3.3 eV compared to carbon nanotubes (CNTs), zinc oxide (ZnO) which is 4.5 eV and Si, hence GaN is used for field emission devices [3][4][5]. Reports on the field emission characteristics of GaN nanowires have already revealed a high emission current density and a long emitter life time [6].…”

Section: Introductionmentioning

confidence: 98%