Nitrogen-containing carbon (CN x ) nanotubes have been grown vertically on silicon substrates by decomposition of a ferrocene/acetonitrile aerosol at temperatures 750, 800, 850, and 900 8С. A CN x nanotube array, produced at 850 8С, had the greatest height $220 mm and the smallest nitrogen content $3.8 at%. The content of graphitic nitrogen form, referred to a nitrogen atom with three carbon neighbors in a hexagonal lattice, increased gradually with the synthesis temperature. Field electron emission measurements showed that the CN x nanotube arrays have better characteristics than aligned non-doped carbon nanotubes. To reveal effect of nitrogen on the filed threshold, we calculated current-voltage dependencies for CN x nanotube models containing different amount of graphitic and pyridinic nitrogen species.Influence of the synthesis temperature on the height and total nitrogen content in CN x nanotube array and relation of these parameters with the threshold of field emission appearance.