Field emission characteristics of high-energy ion-irradiated polycrystalline diamond thin films

Pandey, Padmini; Sharma, Govind; Awasthi, D.K.

doi:10.1016/j.vacuum.2003.08.007

Cited by 12 publications

(5 citation statements)

References 33 publications

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“…Many reports have discussed the effects of ion beam irradiation on the characteristics of type IIa diamond, 10 diamondlike carbon films, 11 taC, 12 , graphite, 13 and polycrystalline CVD diamond films. [14][15][16] Furthermore, Pandey et al 17 and Koinkar et al 18 have studied the field emission enhancement by swift heavy ion irradiation in CVD diamonds but the mechanism is still not clear.…”

Section: Effect Of Gigaelectron Volt Au-ion Irradiation On the Characmentioning

confidence: 99%

Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films

Chen

Teng

Tang

et al. 2010

Journal of Applied Physics

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The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4×1013 ions/cm2 is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 °C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path.

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Section: Effect Of Gigaelectron Volt Au-ion Irradiation On the Characmentioning

confidence: 99%

Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films

Chen

Teng

Tang

et al. 2010

Journal of Applied Physics

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“…The electron field emission process and details of the equipment have been described elsewhere [29]. Emission current density was calculated dividing the current by area of the film exposed to the anode.…”

Section: Field Emission Measurementsmentioning

confidence: 99%

Growth, structure and field emission characteristics of petal like carbon nano-structured thin films

et al. 2005

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“…Many reports have discussed the effects of ion beam irradiation on the characteristics of diamond and related materials, such as type IIa diamond, 15 diamond-like carbon films, 16 taC, 17 graphite 18 and polycrystalline CVD diamond films. [19][20][21] Especially, Pandey et al 22 and Koinkar et al 23 have studied the field emission enhancement by swift heavy ion irradiation in CVD diamonds.…”

Section: Introductionmentioning

confidence: 99%

The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

Chen

Wang

et al. 2013

AIP Advances

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The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (fc = 5.0 × 1012 ions/cm2) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp2-bonded phase (π*-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value

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Field emission characteristics of high-energy ion-irradiated polycrystalline diamond thin films

Cited by 12 publications

References 33 publications

Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films

Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films

Growth, structure and field emission characteristics of petal like carbon nano-structured thin films

The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

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