Field emission characteristic study on bristling few-layer graphite/diamond composite film

Tseng, Po-Tang; Tsai, Ping-Huan; Lu, Anvert; Hou, Jiang-Liang; Tsai, Hung-Yin

doi:10.1016/j.diamond.2016.08.010

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…The linear curve of the high field segment of the F–N plot indicates electron emission caused by the quantum effect, and the slope of the curve is related to the FEE enhancement factor (β). In F–N theory, β is calculated using the following equation (eq ) where A = 1.54 × 10 –6 A eV V –2 , B = −6.83 × 10 3 (eV) −3/2 V μm –1 , m is the slope of the high field segment of the F–N plot (obtained by linear fitting), and φ is the work function of the emitter material, which is assumed to be 5 eV. , …”

Section: Resultsmentioning

confidence: 99%

“…where A = 1.54 × 10 −6 A eV V −2 , B = −6.83 × 10 3 (eV) −3/2 V μm −1 , m is the slope of the high field segment of the F−N plot (obtained by linear fitting), and φ is the work function of the emitter material, which is assumed to be 5 eV. 48,49 The stability of the emission current of synthesized materials is a significant factor for determining the properties of an emitter. Although the highly conductive sp 2 content of the asetched BDD−HNNA-90 would give excellent FEE performance via the formation of typical embedded cascaded sp 2diamond-sp 2 structures, the H-terminated structure displayed comparable properties, as shown in Figure 6a.…”

Section: Fee Performance Of Bdd−hnnasmentioning

confidence: 99%

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Vertically Aligned Boron-Doped Diamond Hollow Nanoneedle Arrays for Enhanced Field Emission

Zheng

Liu

Wang

et al. 2022

ACS Appl. Nano Mater.

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Lower turn-on field (E TO) and threshold field (E THR), as well as a higher current density, are desired characteristics of materials and structures for field emission (FE) applications. In this work, the properties of a boron-doped diamond (BDD) hollow nanoneedle array (HNNA) structure were remarkably enhanced through surface state modulation. By designedly controlling the surface roughness and boron concentration of the BDD film, a uniform and dense HNNA with a high aspect ratio (∼21.3) was constructed by applying O2 + Cl2 inductively coupled plasma reactive ion etching (ICP-RIE) for an optimal duration (90 min). Although the maximum HNNA density (∼5.5 × 106 mm–2) is produced at a shorter duration, the overall FE performance is even worse than that of the BDD film without an HNNA, arising from the field shielding effect and incomplete elimination of defective needles. The finally formed Actiniaria tentacle-like HNNA structure is associated with the masking role of oxidized Si and amorphous carbon on the top edge of the needle embryos, resulting from the electric field edge effect and Si supply accompanying the substrate. Meanwhile, the sp2 carbon generated by ICP-RIE on the surface of the as-etched HNNA promotes the FE, showing a minimum E TO of 0.11 V/μm. After moderate hydrogen plasma treatment, owing to the negative electron affinity (NEA) of C–H on p-type BDD with downward band bending of the conduction band minimum and local electric field enhancement induced by the hollow nanostructure, the hydrogen-terminated BDD–HNNA shows excellent FE stability and a linear Fowler–Nordheim relation with a lower E TO of 0.38 V/μm and E THR of 2.21 V/μm and a desirable current density of 6532 μA/cm2 at 3.75 V/μm. The comprehensive FE properties of the surface-modulated high-quality BDD–HNNA exceed those of the vast majority of other conventional or popular nanostructural counterparts.

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