Field emission cathode array development for high-current-density applications

Spindt, C.A.; Holland, C.E.; Stowell, R.D.

doi:10.1016/0378-5963(83)90073-9

Cited by 68 publications

(22 citation statements)

References 2 publications

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“…For example, Van Veen of Philips Research Labs reported the largest current obtained from a single Mo tip: 850 µA at a gate voltage of 205 V [34]. Spindt reported the highest current of 6 mA drawn from a 12 tip Mo-FEA, which was equivalent to a current density of 320 A/cm 2 or 500 µA/tip [35]. He further found that when the number of tips increased, the average emission current per tip actually decreased due to variations in tip geometry.…”

Section: Field Emitter Arraysmentioning

confidence: 97%

Historical Overview

Utsumi¹

2001

Vacuum Microelectronics

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Section: Field Emitter Arraysmentioning

confidence: 97%

Historical Overview

Utsumi¹

2001

Vacuum Microelectronics

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“…Using the structure models as shown in Figure 1, vertical wedged and tapered ordered nanostructure with the same length of 1 µm, radius of top curvature of 25 nm, and external electric field of 20 V µm −1 , have been set as different material compositions to do such a study. The chosen materials are some of the representative field emission materials, including carbon (with the surface work function φ of 5 eV), [38,39] zinc oxide (φ ≈ 5.2 eV), [40] silicon (φ ≈ 4.6 eV), [41] tungsten (φ ≈ 4.52 eV), [42] molybdenum (φ ≈ 4.24 eV), [25][26][27] and boron (φ ≈ 4.4 eV). [43] Figure 6 shows the comparison curves of the wedged ordered nanostructure and tapered nanostructure unit for different material compositions.…”

Section: Analytical Modeling For Different Materialsmentioning

confidence: 99%

“…The surface work function φ of both models was set to 4.24 eV, assuming that the simulated material composition was molybdenum. [25][26][27] The applying voltage V was supposed to 2000 V, thus the external electrical field in this case was 20 V µm −1 . For the single wedged ordered nanostructure, the local electrical field intensities E local could be over 3000 V µm −1 in the middle locations on the top emission edge, and their corresponding distributions were relatively homogenous (Figure 2b).…”

Section: Analytical Modeling For Individualsmentioning

confidence: 99%

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

Shen

et al. 2017

Adv Elect Materials

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ties and potential applications: Spindt-type array composed of tapered microstructures have shown high current density over 1.6 × 10 3 A cm −2 with site density of 10 9 cm −2 , [2][3][4] and has been successfully applied in the traveling wave tube with the saturation power of 100 W and working frequency of 5 GHz. [5,6] High aspect ratio carbon nanotubes (CNTs) revealed large field enhancement factor (generally larger than ≈10 3 ) and good field electron emission properties, [7][8][9] and have been used in field emission display (FED), [10,11] flat panel light source, [12] X-ray tube, [13,14] and microwave tube. [15,16] Semiconductor nanowires (e.g., ZnO, CuO) exhibited the field electron emission characteristics with low turn-on field and good uniformity, [17][18][19] and have been demonstrated to exhibit application prospect in flat panel X-ray source and detector. [20,21] Although there is much experimental research and progress, theoretical analysis and calculation of field electron emission structure to tell people where the advantages lie and how to make improvements are still scarce, in order to obtain efficient field electron emission materials. Structural feature of materials affects some defining characteristics during the field electron emission process, including the field enhancement factor, local electronic field distribution, as well as actual emission sites and emission area. [22] And hence, it is of important significance to simulate and analyze the field emission structures and their corresponding emission properties. In this work, we focused on vertical tapered nanostructure and its derivative wedged ordered nanostructure. On the one hand, such nanostructures have the advantages that their sharp tips, large lengths, and vertical alignment help to bring large field enhancement factor and low turn-on field, [23,24] and their robust bottoms contribute to reducing the resistance and improving heat dissipation at high applied electric field. [25] On the other hand, these nanostructures could be obtained through existing preparation methods, whether top-down microprocessing or the bottom-up self-assembled growth. Table 1 lists the representative vertical tapered structural field emission materials and their derivatives. Majority of them have shown good field electron emission properties.Here, in order to develop a kind of field electron emission structure with high current density, vertical ordered tapered and wedged nanostructures have been analytically modeled and thoroughly studied. Local electrical field intensity and emission current density distributions have been simulated, and the The development of field electron emission materials requires purposeful analytical modeling of structural features. A vertical wedged ordered nanostructure shows better field emission current density because of its in-plane continuity at the top emission edge: Individually, its calculated average current density can be 8.3-26.7 times larger than a tapered nanostructure when its bottom area s increases from 0.5 to 2...

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“…First proposed over 25 years ago, thin-film field-emission technology has experienced a resurgence in interest as microfabrication technology has matured [7]. The first functioning micron scale field emission devices were made by Spindt [8] and continuous improvements to this process have been made with corresponding improvements in performance [2]. The use of FEAs in microwave power tubes was first discussed by Brodie and Spindt [4].…”

mentioning

confidence: 99%

“…Development of FEAs at research centers around the world is proceeding with applications in microwave devices and display technology [1][2][3][4][5][6] in which they provide a compact, controllable electron source. FEAs have the potential to revolutionize free-electron microwave devices, since electron emission can in principle be modulated by small voltages (10 V) to very high frequencies (GHz) to effectively prebunch the electron beam for coherent microwave generation.…”

mentioning

confidence: 99%

Gyrotron experiments employing a field emission array cathode

Garven

Cooke²,

Cross³

et al. 1995

International Conference on Plasma Science (Papers in Summary Form Only Received)

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The design and operation of a field emission array (FEA) cathode and the subsequent demonstration of the first FEA gyrotron are presented. Up to 10 mA from 30 000 tips was achieved reproducibly from each of ten chips in a gyrotron environment, namely, a vacuum 1 3 10 28 mbar, 250 kV potential with multiple chip operation. The design parameters of the FEA gun were similar to those of a magnetron injection gun with an achievable electron beam current of 50 -100 mA and measured power 720 W cw. Coherent microwave radiation was detected in both TE 02 at 30.1 GHz and TE 03 at 43.6 GHz, with a starting current of 1 mA. [S0031-9007(96)

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Field emission cathode array development for high-current-density applications

Cited by 68 publications

References 2 publications

Historical Overview

Historical Overview

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

Gyrotron experiments employing a field emission array cathode

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