Field emission and current-voltage properties of boron nitride nanotubes

Cumings, John; Zettl, A.

doi:10.1016/j.ssc.2003.11.026

Cited by 105 publications

(61 citation statements)

References 26 publications

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“…The work function and electron affinity of MoS 2 are 4.6-4.9 eV and 4.2 eV, respectively 31,32 . hBN has larger band gap (5.2-5.9 eV) and smaller electron affinity (2-2.3 eV) 7,33 . Thererefore, the barrier heights for electron and hole tunnelling through hBN (F e and F h ) are 2.3-2.6 eV and 2.7-3.4 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

et al. 2013

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Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

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Section: Resultsmentioning

confidence: 99%

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

et al. 2013

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“…The work function of h-BN (approximately 6 eV) is higher than that of nanocarbons (5 eV). Furthermore, a study of the field emission from pure BN multiwall nanotubes [10] has shown that the work function values estimated in a similar way may be even higher than 10 eV. Such large value of the work function may indicate that the field emission from BN nanotubes does not truly obey the Fowler-Nordheim theory.…”

Section: Original Papermentioning

confidence: 99%

Field emission from single‐wall nanotubes obtained from carbon and boron nitride mixtures

Kleshch

Obraztsova

Arutyunyan

et al. 2008

Physica Status Solidi (b)

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Heterophase BN:C single‐wall nanotubes are prospective as a material with a predicted possibility to vary the bandgap via changing a relative content of BN and C fractions in the nanotube walls. The challenge is both to find the ways of synthesis of such nanotubes and, in case of success, to confirm BN embedding. In this work field emission studies have been performed for revealing the difference between arc‐produced pure carbon nanotubes and nanotubes grown from BN:C mixtures. The relative BN content in the mixtures was varied from 0% up to 50% (by mass). The materials have been characterized by a high resolution transmission electron microscopy, Raman scattering and UV‐VIS‐NIR optical absorption techniques. The single‐wall nanotubes have been revealed in all samples synthesized, but their composition remained questionable. The field emission properties of the samples have been examined in a vacuum diode configuration. It has been found that the threshold fields and slopes of the Fowler–Nordheim plot, evaluated from the measured current–voltage dependences, increased with an enrichment of the starting mixtures with h‐BN. This increase could be attributed to the work function rise due to h‐BN embedding into the carbon nanotube walls. This result opens a way to use the field‐emission characterization for an indirect confirmation of the heterophase BN:C nanotube formation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Multiwall carbon nanotubes, concentrically stacked tubular sheets of graphite, were extended in a telescopic manner using an STM probe and their nonlinear electrical resistance change was monitored [47]. In this type of study it is important to have proper electrical contacts, as will be discussed in Sect.…”

Section: Electron Transport Studiesmentioning

confidence: 99%

Combining Scanning Probe Microscopy and Transmission Electron Microscopy

Nafari¹,

Angenete²,

Svensson

et al. 2010

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2

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This chapter is a review of an in situ method where a scanning probe microscope (SPM) has been combined with a transmission electron microscope (TEM). By inserting a miniaturized SPM inside a TEM, a large set of open problems can be addressed and, perhaps more importantly, one may start to think about experiments in a new kind of laboratory, an in situ TEM probing laboratory, where the TEM is transformed from a microscope for still images to a real-time local probing tool. In this method, called TEMSPM, the TEM is used for imaging and analysis of a sample and SPM tip, while the SPM is used for probing of electrical and mechanical properties or for local manipulation of the sample. This chapter covers both instrumental and applicational aspects of TEMSPM. Abbreviations

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Field emission and current-voltage properties of boron nitride nanotubes

Cited by 105 publications

References 26 publications

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Field emission from single‐wall nanotubes obtained from carbon and boron nitride mixtures

Combining Scanning Probe Microscopy and Transmission Electron Microscopy

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