Field Effect Resistor, a single-device-at-pad solution for ESD protection in deeply scaled SOI technology

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

“…Various doping combinations have been simulated in TCAD to explore the impact of doping profile [39] helps reduce the gate voltage required to initiate the onset of inversion, thus the P-N-P-N structure (forward-blocking mode) in the silicon film is easier to form and sustain. For doping levels lower than 5 Â 10 16 , under 1 V gate bias, the leakage current is still negligible even when the anode voltage is increased to above 1 V.…”