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2024
DOI: 10.1039/d3ee03496h
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Field effect nanogenerator operated by sliding gates

Chongxiang Pan,
Leo N.Y. Cao,
Jia Meng
et al.

Abstract: Controlling the motion of charge carriers in semiconductor materials is the fundamental strategy to realize many functional devices, which is typically done by applying an external voltage source. Here, using...

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Cited by 1 publication
(1 citation statement)
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References 42 publications
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“…1b. 13,16,20–33 In comparison to the previous state-of-the-art research (130 V), the output DC voltage of the I-Q-TVNG significantly increased 16.8-fold (2324 V). In addition, the normalized retention rates of output performance for some highly durable TVNGs are listed in Table S2 (ESI†).…”
Section: Resultsmentioning
confidence: 67%
“…1b. 13,16,20–33 In comparison to the previous state-of-the-art research (130 V), the output DC voltage of the I-Q-TVNG significantly increased 16.8-fold (2324 V). In addition, the normalized retention rates of output performance for some highly durable TVNGs are listed in Table S2 (ESI†).…”
Section: Resultsmentioning
confidence: 67%