Field dependent critical trap density for thin gate oxide breakdown

Ultrathin gate oxide reliability: physical models, statistics, and characterization

“…Recently, it has been reported that was increased for very long stress times [67] and under alternating bias stress [68]. Other reports indicated a decreasing for decreasing stress voltage [35], [69], [70]. More studies are required to understand the exact relationship between electrically measured defects and those that lead to oxide wear-out and eventual breakdown.…”

A Century of Dielectric Science and Technology

“…Another invited talk was given by Cheung, one of the leaders in understanding the effects of charge damage to oxides during plasma processes. 27,28 Due to its current importance, a large number of papers were presented describing growth and deposition of nitrides and oxynitrides. D'Emic and coworkers at IBM described the various ways of growing oxynitrides, including rapid thermal anneals using NH 3 , N 2 O, and NO, and depositing oxynitrides using various chemical deposition techniques.…”

Oxide Wearout, Breakdown, and Reliability

“…The extrapolated trap generation data can then be coupled with the statistical models of breakdown to predict breakdown at low voltages [48][49]. The field dependence of trap generation has been the subject of continuing investigation [478,481,540,559,568,573,577,581,613,638,658,[707][708][709][710][711][712]. The trap generation has been measured in oxides between 5 nm and 13.5 nm thick [559,568,573,581] using the decay-of-tunneling-current technique [531].…”

“…Oxide trap generation and breakdown have different field acceleration factors, because of the complex time dependence of trap generation. Non-Arrhenius trap generation and breakdown have been observed [26,488,577,585,661,714,715]. A non-Arrhenius activation energy is inherent in the Eyring formulation of chemical reactions, where all forces acting on the reaction must be considered [716][717][718].…”