Field and thermionic-field emission in Schottky barriers

Padovani, Francesco; Stratton, R.

doi:10.1016/0038-1101(66)90097-9

Cited by 1,269 publications

(537 citation statements)

References 10 publications

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“…In order to explain the observed I-V-T behavior far from the TE mechanism for the Pt/n-GaN Schottky interface, we took account a tunneling transport component based on the thermionic-field emission (TFE) model proposed by Padvani and Stratton [9]. The focus was placed on the reverse bias region at low temperatures where reverse leakage properties showed nearly exponential behavior as expected in the TFE model.…”

Section: Resultsmentioning

confidence: 99%

“…In the TFE model [9], the reverse current transport is due to electrons that are thermally excited from the metal Fermi sea and tunnel through the semiconductor depletion layer to the semiconductor conduction band. In this case, the tunneling probability rapidly increases exponentially with the energy because the excited electrons see thinner and lower barriers, whereas the number of such thermally exited electron decreases exponentially with energy.…”

Section: Resultsmentioning

confidence: 99%

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Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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Detailed current-voltage-temperature (I-V-T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I-V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1 x 10 17 cm -3 . A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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“…For this case, simplified expressions for the transmission factor and the tunneling current were given by Padovani and Stratton. 40,29 It turns out that ͑in the tunneling case͒, the current can be expressed as…”

Section: Appendix: Tunneling Through a Schottky Barriermentioning

confidence: 99%

Tunneling spectroscopy on the correlation effects in FeSi

Fäth

Aarts

Menovsky

et al. 1999

Physica B: Condensed Matter

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We have performed electron tunneling spectroscopy on FeSi single crystals in the temperature range 4-300 K by using a scanning tunneling microscope. The differential conductance (dI/dV), when corrected for Schottky barrier effects, exhibits two strongly temperature-dependent peaks on either side of the Fermi level that emerge below Ϸ200 K and that are separated by a ͑pseudo͒gap of Ϸ50 meV. Our observations can be ascribed to the formation of quasiparticle density of states caused by d-electron correlation. The tunneling spectra are in good agreement with photoemission spectroscopy as both techniques probe the correlated d-electron density of states ͑DOS͒. Our results are also consistent with optical reflectivity data and Raman spectroscopy, which, in contrast, are sensitive to the conduction (c) electron DOS. ͓S0163-1829͑98͒08248-4͔

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“…Previously, the TFE/TE process was discussed by using the approximate analytical formulas derived by Padvani and Stratton [5]. They are based on the Taylor expansion of the integrand of the above Eq.…”

Section: Comparison With Analytical Formulas By Padvani and Strattonmentioning

confidence: 99%

“…For the forward bias region, both methods gave nearly the same linear log I-V characteristics. Padvani and Stratton [5] derived the following well-known analytic formula for the ideality factor, n F , for the forward TFE/TE transport.…”

Section: Comparison With Analytical Formulas By Padvani and Strattonmentioning

confidence: 99%

Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

Kotani

Hasegawa

Hashizume

2004

Applied Surface Science

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This paper attempts a rigorous computer simulation of the current transport in GaN and AlGaN Schottky diodes on the basis of the thin surface barrier (TSB) model recently proposed by the authors' group. First, a computer program was developed which can calculate current transport through an arbitrary potential profile of Schottky barrier by a combined mechanism of thermionic emission (TE), thermionic-field emission (TFE) and field emission (FE). Then, from the view point of the TSB model, attempts were made to fit the theoretical temperature dependent current voltage (I-V-T) curves to the measured I-V-T data taken on Ni/n-GaN and Ni/n-AlGaN Schottky diodes changing the barrier profiles and the energy depth of the surface donor. As compared with the previous poor fitting using approximate analytic formulas, excellent fitting was obtained for both forward and reverse current, confirming the validity of the TSB model as the mechanism for anomalously large leakage currents in GaN and AlGaN Schottky diodes. Best fittings for GaN and Al 0.26 Ga 0.74 N were obtained for exponentially decaying distributions of surface defect donors with the peak density of 5x10 18 cm -3 and 1x10 19 cm -3 , the characteristic decay depth of 11 nm and 11.5nm and the energy depth of 0.25 eV and 0.37eV, respectively.

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Field and thermionic-field emission in Schottky barriers

Cited by 1,269 publications

References 10 publications

Mechanism of current leakage through metal/n-GaN interfaces

Mechanism of current leakage through metal/n-GaN interfaces

Tunneling spectroscopy on the correlation effects in FeSi

Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

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