We propose a new, concise method
for conformal chemical vapor deposition
(CVD) using sacrificial layers (SLs) to fill three-dimensional features
with microscopic pores. SLs are porous membranes (e.g., ceramic felts)
that filter film-forming species having high sticking-probability
(η). CVD processes with multiple film-forming species generally
suffer from poor conformality due to preferential film deposition
at the inlets of features by the high-η species, such as reactive
intermediates. An SL traps such high-η species before they reach
the target features and selectively supplies film-forming species
with lower η (e.g., source precursors or stable intermediates)
that enables conformal film deposition. Here the trapping efficiency
of an SL was predicted and a procedure for designing an optimal SL
was established. The procedure was demonstrated by CVD of silicon
carbide (SiC) with multiple film-forming species of high-η species
(η = 8.0 × 10–3) and lower-η species
(η = 5.9 × 10–5 and 2.2 × 10–7). The trapping of 99.2% of incident high-η
species was achieved with an optimized SL, wherein the deposition
rate (m/s) contribution by high-η species declined from 0.546
at the SL inlet to 0.014 at its outlet. Finally, using these optimized
SLs, SiC-CVD filling of micron-scale trenches was demonstrated with
an aspect-ratio of 16:1.