FIB mask repair technology for EUV mask

Amano, Tsuyoshi; Nishiyama, Yasushi; Shigemura, Hiroyuki; Terasawa, Tsuneo; Suga, Osamu; Shiina, Kensuke; Aramaki, Fumio; Yasaka, Anto; Abe, Tsukasa; Mohri, Hiroshi

doi:10.1117/12.824335

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…[1][2][3] In addition, in order to increase the integration density in semiconductor devices, three-dimensional (3D) integration methods such as vertical chip-to-chip bonding using conductive metal dots and pillars is needed. For example, in extreme ultraviolet lithography, very fine metal deposition at each mask defect site is required to repair the mask.…”

Section: Introductionmentioning

confidence: 99%

“…10 The HIM may reduce beam-induced damage to the TEM tomography sample because a much lower beam current (i.e., dose) is used during deposition. 2,22 In this study, we first form tungsten-based pillars with the HIM-GIS method using W(CO) 6 as a gaseous precursor. This is because of the lower-energy secondary electrons (SEs) of 1-10 eV induced by the helium ion beam, 11,12 which react with precursor gas molecules.…”

Section: Introductionmentioning

confidence: 99%

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Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage

Kohama

Iijima

Hayashida³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inStructural characterization of He ion microscope platinum deposition and sub-surface silicon damage Analysis of subsurface beam spread and its impact on the image resolution of the helium ion microscope J. Vac. Sci. Technol. B 28, C6F6 (2010); 10.1116/1.3497012Direct-write patterning of microstructured porous silicon arrays by focused-ion-beam Pt deposition and metalassisted electroless etching Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces J.The authors use a helium ion microscope (HIM) equipped with a tungsten hexacarbonyl gas injection system (GIS) to form tungsten-based pillars on carbon and silicon substrates by helium ion beaminduced deposition. Tungsten-based pillars with a width of $40 nm and height of $2 lm (aspect ratio of $50) are successfully fabricated using the HIM-GIS method. The pillars consist of face-centered cubic WC 1Àx and/or W 2 (C, O) grains. Columnar voids with a width of 1-15 nm form in the center of the pillars, suggesting that the pillars are continuously sputter-etched by the incident helium ion beam during deposition. In addition, the authors observe beam irradiation damage in the form of blistering of the Si substrate at the interface between the pillar and Si substrate. The columnar void width and Si blister height decreases as the volumetric growth rate of the pillars increases regardless of the deposition parameters. The authors consider that at least three phenomena compete during pillar formation, namely pillar deposition, sputter-etching, and Si blistering. Although there are numerous parameters involved in HIM-GIS deposition, it appears that the volumetric growth rate determines both the microstructure of the tungsten-based pillars and the degree of substrate damage.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage

Kohama

Iijima

Hayashida³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Material modification with ion beams represents an important technological toolkit for semiconductor doping [1], lithography mask repair [2], surface smoothing [3], and many other fields [4,5]. The level of control over the modification is determined by the mechanism of energy deposition.…”

Section: Introductionmentioning

confidence: 99%

Vanishing influence of the band gap on the charge exchange of slow highly charged ions in freestanding single-layer MoS2

et al. 2020

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Charge exchange and kinetic energy loss of slow highly charged xenon ions transmitted through freestanding monolayer MoS 2 are studied. Two distinct exit charge state distributions, characterized by high and low charge states, are observed. They are accompanied by smaller and larger kinetic energy losses, as well as scattering angles, respectively. High charge exchange is attributed to two-center neutralization processes, which take place in close impact collisions with the target atoms. Experimental findings are compared to graphene as a target material and simulations based on a time-dependent scattering potential model. Independent of the target material, experimentally observed charge exchange can be modeled by the same electron capture and de-excitation rates for MoS 2 and graphene. A common dependence of the kinetic energy loss on the charge exchange for MoS 2 as well as graphene is also observed. Considering the similarities of the zero band-gap material graphene and the 1.9 eV band-gap material MoS 2 , we suggest that electron transport on the femtosecond timescale is dominated by the strong influence of the ion's Coulomb potential in contrast to the dispersion defined by the material's band structure.

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