2021
DOI: 10.3390/mi13010011
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FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

Abstract: Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

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Cited by 3 publications
(4 citation statements)
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“…Additionally, its field effect mobility was temperature-dependent and obeyed the Conwell-Weisskopf relationship within the temperature of <250 K. For another Te NTs with an easily tunable diameter (40-100 nm), by using the solvothermal method, their surface-to-volume ratio and crystallinity were optimized to fill their surface trap states and crystalline defects with more photo-generated holes. As a consequence, a high photore-sponsivity of 1.65 × 10 4 A•W −1 and photoconductivity gain of 5.0 × 10 6 % were observed on the optoelectronic nanodevice based on these Te NTs [41].…”
Section: Electrical Propertiesmentioning
confidence: 98%
See 1 more Smart Citation
“…Additionally, its field effect mobility was temperature-dependent and obeyed the Conwell-Weisskopf relationship within the temperature of <250 K. For another Te NTs with an easily tunable diameter (40-100 nm), by using the solvothermal method, their surface-to-volume ratio and crystallinity were optimized to fill their surface trap states and crystalline defects with more photo-generated holes. As a consequence, a high photore-sponsivity of 1.65 × 10 4 A•W −1 and photoconductivity gain of 5.0 × 10 6 % were observed on the optoelectronic nanodevice based on these Te NTs [41].…”
Section: Electrical Propertiesmentioning
confidence: 98%
“…Te is well known as a p-type narrow bandgap (0.35 eV, direct) semiconductor that lacks centrosymmetry; thus, the electrical [39], optical [13,39,40], magnetic [23,33], and other properties [1,41] of its NTs are greatly controlled by their geometric, structural, physical, and chemical features. Rational optimization of these factors is important to ensure the effective uses of Te NTs in electronic and optoelectronic applications.…”
Section: Property Controlmentioning
confidence: 99%
“…TMDC vdW 1D heterostructured NTs are synthesized from 2D nanosheets, providing new opportunities for potential applications in electronics and optoelectronics. 1D heterostructured TMDCs, combined with single-walled carbon nanotubes (SWCNT) [190,63] and boron nitride [191] NTs etc., [192][193][194] demonstrate improved functionality compared to 2D TMDC nanosheets in electronic and optoelectronic devices. [195,178] Recent researches show that 2D structures can self-assemble into NT structures, expanding the possibilities for their applications.…”
Section: Ntsmentioning
confidence: 99%
“…Functional nanomaterials have been widely used in a variety of applications such as sensing [1,2], energy harvesting [3][4][5], and medical treatments [6] due to their unique physicochemical performance compared with conventional bulk counterparts. Current challenges in this field are the accurate assembly and rapid integration of these functional nanomaterials for various application requirements.…”
Section: Introductionmentioning
confidence: 99%