Few-layered ReS_2 as saturable absorber for 28  μm solid state laser

Su, Xiancui; Nie, Hongkun; Wang, Yiran; Li, Guoru; Yan, Bingzheng; Yang, Kejian; He, Jingliang

doi:10.1364/ol.42.003502

Cited by 65 publications

(28 citation statements)

References 22 publications

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“…The length and width of ReS 2 flakes are as large as 3-5 μm, which has potential for applications in solid-state bulk lasers, where the oscillation laser dimension is much larger than it is in fiber lasers. Compared with the samples in our previous paper, the flakes in this work have a slightly larger dimension and thickness [45]. That is because, in the two preparation processes, the concentration of ReS 2 and the ultrasonic time differ, resulting in a slight difference in thickness and dimension of the flakes.…”

Section: Preparation and Characterization Of The Res 2 Samentioning

confidence: 59%

“…In comparison with fiber lasers, solid-state lasers possess superiorities, such as high power and smooth spectral property without sidebands. Recently, our group has achieved a Q-switched solid-state laser at 2.8 μm by using ReS 2 as a saturable absorber [45]. The above successful applications in ultrafast lasers make ReS 2 a promising optical modulator.…”

Section: Introductionmentioning

confidence: 99%

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Broadband rhenium disulfide optical modulator for solid-state lasers

Zhang

Wang

et al. 2018

Photon. Res.

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Rhenium disulfide (ReS 2 ), a member of group VII transition metal dichalcogenides (TMDs), has attracted increasing attention because of its unique distorted 1T structure and electronic and optical properties, which are much different from those of group VI TMDs (MoS 2 , WS 2 , MoSe 2 , WSe 2 , etc.). It has been proved that bulk ReS 2 behaves as a stack of electronically and vibrationally decoupled monolayers, which offers remarkable possibilities to prepare a monolayer ReS 2 facilely and offers a novel platform to study photonic properties of TMDs. However, due to the large and layer-independent bandgap, the nonlinear optical properties of ReS 2 from the visible to midinfrared spectral range have not yet been investigated. Here, the band structure of ReS 2 with the introduction of defects is simulated by the ab initio method, and the results indicate that the bandgap can be reduced from 1.38 to 0.54 eV with the introduction of defects in a suitable range. In the experiment, using a bulk ReS 2 with suitable defects as the raw material, a few-layered broadband ReS 2 saturable absorber (SA) is prepared by the liquid phase exfoliation method. Using the as-prepared ReS 2 SA, passively Q-switched solid-state lasers at wavelengths of 0.64, 1.064, and 1.991 μm are investigated systematically. Moreover, with cavity design, a femtosecond passively modelocked laser at 1.06 μm is successfully realized based on the as-prepared ReS 2 SA for the first time. The results present a promising alternative for a rare broadband optical modulator and indicate the potential of ReS 2 in generating Q-switched and mode-locked pulsed lasers. It is further anticipated that this work may be helpful for the design of 2D optoelectronic devices with variable bandgaps.

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Section: Preparation and Characterization Of The Res 2 Samentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Broadband rhenium disulfide optical modulator for solid-state lasers

Zhang

Wang

et al. 2018

Photon. Res.

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“…Light absorption by ReS 2 depended on the optical spectrum that influenced photocurrent generation because a greater number of photons were trapped at the high absorbance area. The absorbance of ReS 2 increased with the wavelength in the visible spectrum (from 400 to 700 nm) . By contrast, the intrinsic optical properties of graphene permitted broadband photodetection with a low responsivity and a constant light absorption across the visible light range .…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure

Kang

Kim

Yoo

et al. 2018

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Heterostructures that combine graphene and transition metal dichalcogenides, such as MoS , MoTe , and WS , have attracted attention due to their high performances in optoelectronic devices compared to homogeneous systems. Here, a photodevice based on a hybrid van der Waals heterostructure of rhenium disulfide (ReS ) and graphene is fabricated using the stacking method. The device presents a remarkable ultrahigh photoresponsivity of 7 × 10 A W and a detectivity of 1.9 × 10 Jones, along with a fast response time of less than 30 ms. Tremendous photocurrents are generated in the heterostructure due to the direct bandgap, high quantum efficiency, and strong light absorption by the multilayer ReS and the high carrier mobility of graphene. The ReS /graphene heterostructured device displays a high photocurrent under the applied gate voltages due to the photogating effect induced by the junction between graphene and ReS . The ReS /graphene heterostructure may find promising applications in future optoelectronic devices, providing a high sensitivity, flexibility, and transparency.

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“…These Re 4 'diamonds' are coplanar and are coupled with one another to form a one-dimensional clustering pattern of 'diamond chains' [13]. Its distorted 1T structure results in the weaker interlayer coupling action [12][13][14][15][16][17]. Further, ReSe 2 behaves as electronically and vibrationally decoupled monolayers [15,16].…”

Section: Introductionmentioning

confidence: 99%

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

Leng

Huo

2018

Applied Sciences

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We report a solid-state passively Q-switched Nd:YVO4 laser adopting rhenium diselenide (ReSe2) as saturable absorber (SA) materials. ReSe2 belongs to a type of transition metal dichalcogenides (TMDs) materials and it has the weak-layered dependent feature beneficial for the preparation of few-layer materials. The few-layer ReSe2 was prepared by ultrasonic exfoliation method. Using a power-dependent transmission experiment, its modulation depth and saturation intensity were measured to be 1.89% and 6.37 MW/cm2. Pumped by diode laser and based on few-layer ReSe2 SA, the Q-switched Nd:YVO4 laser obtained the shortest Q-switched pulse width of 682 ns with the highest repetition rate of 84.16 kHz. The maximum average output power was 125 mW with the slope efficiency of 17.27%. Our experiment, to the best of our knowledge, is the first demonstration that used ReSe2 as SA materials in an all-solid-state laser. The results show that the few-layer ReSe2 owns the nonlinear saturable absorption properties and it has the capacity to act as SA in an all-solid-state laser.

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Few-layered ReS_2 as saturable absorber for 28 μm solid state laser

Cited by 65 publications

References 22 publications

Broadband rhenium disulfide optical modulator for solid-state lasers

Broadband rhenium disulfide optical modulator for solid-state lasers

Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

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Few-layered ReS_2 as saturable absorber for 28 μm solid state laser

Cited by 65 publications

References 22 publications

Broadband rhenium disulfide optical modulator for solid-state lasers

Broadband rhenium disulfide optical modulator for solid-state lasers

Ultrahigh Photoresponsive Device Based on ReS2/Graphene Heterostructure

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

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Product

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Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure