Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications

Khan, Majharul Haque; Liu, Huan; Sun, Xudong; Yamauchi, Yusuke; Bando, Yoshio; Golberg, Dmitri; Huang, Zhenguo

doi:10.1016/j.mattod.2017.04.027

Cited by 112 publications

(94 citation statements)

References 248 publications

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“…Together with other chemical, mechanical, and electrical properties, h-BN is a promising 2D material for future semiconductor devices in the field of optoelectronics, functional composites, accumulators, or electrically insulating substrates. It seems to have high potential for electrical insulating layers, which can spread heat away from critical structures effectively [41]. The properties of h-BN are explained here in more detail due to its potential.…”

Section: Samples and Materials Under Investigationmentioning

confidence: 99%

“…The hexagonal structure is stable until a melting point of approximately 2967 • C and, therefore, will not be affected by our SThM measurements (tip temperature < 200 • C). The use of h-BN in semiconductor devices is still at a very early stage and there is a huge variety of other promising 2D materials for MS, such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 [41]. The first synthesis of BNNS was performed in 1842 by the reaction between boric oxide and potassium cyanide [49].…”

Section: Samples and Materials Under Investigationmentioning

confidence: 99%

“…Today, CVD is the most effective technique for large-scale synthesis of BNNS. Optical microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy (FITR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and AFM are the most common characterization methods [41].…”

Section: Samples and Materials Under Investigationmentioning

confidence: 99%

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On the Limits of Scanning Thermal Microscopy of Ultrathin Films

et al. 2020

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Heat transfer processes in micro- and nanoscale devices have become more and more important during the last decades. Scanning thermal microscopy (SThM) is an atomic force microscopy (AFM) based method for analyzing local thermal conductivities of layers with thicknesses in the range of several nm to µm. In this work, we investigate ultrathin films of hexagonal boron nitride (h-BN), copper iodide in zincblende structure (γ-CuI) and some test sample structures fabricated of silicon (Si) and silicon dioxide (SiO2) using SThM. Specifically, we analyze and discuss the influence of the sample topography, the touching angle between probe tip and sample, and the probe tip temperature on the acquired results. In essence, our findings indicate that SThM measurements include artefacts that are not associated with the thermal properties of the film under investigation. We discuss possible ways of influence, as well as the magnitudes involved. Furthermore, we suggest necessary measuring conditions that make qualitative SThM measurements of ultrathin films of h-BN with thicknesses at or below 23 nm possible.

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Section: Samples and Materials Under Investigationmentioning

confidence: 99%

Section: Samples and Materials Under Investigationmentioning

confidence: 99%

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On the Limits of Scanning Thermal Microscopy of Ultrathin Films

et al. 2020

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“…It is desirable to develop superior adsorbents in order to meet the challenging separations requirement for future industries. Recent years, along with the hot research regarding two-dimensional (2D) nanomaterials, hexagonal boron nitride (h-BN) has attracted increasingly research interest [7][8][9][10][11][12][13] . BN is a chemical compound with alternating boron and nitrogen atoms.…”

Section: Introductionmentioning

confidence: 99%

Hexagonal boron nitride adsorbent: Synthesis, performance tailoring and applications

Xiong

Zhu

et al. 2020

Journal of Energy Chemistry

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“…This is in contrast, to materials grown at temperatures higher than the substrate can withstand. In such cases, a transfer step from a substrate which is temperature stable to the final substrate is needed . However, a low‐temperature deposition directly on the final substrate avoids the need for any complex and costly transfer steps.…”

Section: Introductionmentioning

confidence: 99%

Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) Synthesis of Conducting Polymers and Related Conjugated Organic Materials

Gharahcheshmeh

Gleason

2018

Adv Materials Inter

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lightweight, wearable, and stretchable properties of CPs relative to traditional materials highlight the areas where CPs may find their niche in modern devices. [2] The fabrication of uniform CPs in large scale with high throughput roll-to-roll process is of great importance in industrial sectors. To achieve this purpose, chemical vapor deposition (CVD) along with other vapor deposition methods are the promising approaches to expedite the commercialization process of CPs in large-scale applications.For polymers which dissolve, films can be formed by solution-based methods such as dip-coating and spin-coating. However, CPs, particularly those formed from unfunctionalized monomers, are often insoluble or require solvents which are unsafe and costly to use. The lack of solubility is typically associated with a rigid backbone structure that promotes crystallite formation. As a result, dissolution requires overcoming the associated enthalpy of crystallization.The need for solubilizing polymers is eliminated by employing CVD as the thin film formation technique. A variety of different CVD processes have been developed for vapor phase reactants to undergo similar polymerization mechanisms as those reported for solution synthesis. [3] These include CVD polymer methods for chain growth by free radical or cationic initiation, or by condensation polymerization. For most conjugated macromolecules, the desired variant of the CVD method needs to mimic the step-growth polymerization mechanism in order to obtain optimized properties, such as electrical conductivity. This motivated the invention of oxidative CVD (oCVD) in which the vacuum chamber design, strategy for reactant vapor introduction, and process conditions are optimized for step-growth polymerization. Vapor deposition methods which are not mechanistically motivated, such as thermal evaporation, pulsed laser deposition, and plasma-enhanced CVD, can result in conjugated polymer films having properties that are insufficient for integration into many types of devices. Thus, one major significance of achieving conjugated polymers having highly desirable characteristics by oCVD is the ability to fabricate state-of-the-art optoelectronic and energy storage devices.The oCVD process is a single-step method to convert vapor phase monomers, along with vapors of oxidant, into thin CP films. [3,4] At the surface of the substrate, step-growth Conducting polymers (CPs) combine electronic conductivity, optical transparency, and mechanical flexibility compatible with lightweight substrates. Due to these features CPs exhibit promising performance for a wide range of applications including electronic, optoelectronic, electrochemical, optochemical, and energy storage and harvesting devices. Fabrication of high-quality CPs thin film in a large scale is of high demand in multiple industrial sectors. Chemical vapor deposition (CVD) is a promising approach for scale-up and commercialization of CPs in large-scale thin film applications by a roll-to-roll process. The CVD technique is a versati...

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Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications

Cited by 112 publications

References 248 publications

On the Limits of Scanning Thermal Microscopy of Ultrathin Films

On the Limits of Scanning Thermal Microscopy of Ultrathin Films

Hexagonal boron nitride adsorbent: Synthesis, performance tailoring and applications

Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) Synthesis of Conducting Polymers and Related Conjugated Organic Materials

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