FET on hydrogenated diamond surface

Gulyaev, Yu. V.; Mityagin, A. Yu.; Чучева, Г. В.; Афанасьев, М. С.; Zyablyuk, K. N.; Talipov, N. Kh.; Nedosekin, P. G.; Nabiev, A. E.

doi:10.1134/s1064226914030061

Cited by 8 publications

(6 citation statements)

References 25 publications

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“…[4] Adsorbed species, such as atmospheric H2O, NO2, or intentionally-introduced passivation species contact this dipole layer, and together generate a two-dimensional hole gas (2DHG) with 10 13 -10 14 holes/cm 2 carrier density several nanometers below the diamond surface. [5,6] Figure 1: Performance limits for applied voltage and cut-off frequency for diamond, in comparison to GaN, SiC, GaAs, and Si. [1] Hydrogen-terminated diamond has been used as the basis for metal-semiconductor field effect transistors (MESFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs) hydrogen-terminated diamond.…”

Section: Background Investigationsmentioning

confidence: 99%

(Invited) High Power Diamond Devices with 2-D Transport Channels

2017

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Section: Background Investigationsmentioning

confidence: 99%

(Invited) High Power Diamond Devices with 2-D Transport Channels

2017

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“…Boron is the only impurity available when working with diamond and allowing a relatively high degree of activation at moderate temperatures [7,8]. Another possibility for creating a δ-layer is an H-terminated layer, where univalent atomic hydrogen, like boron, acts as an acceptor impurity located at a depth of ~1 nm from the diamond surface [9,10]. The technology for manufacturing such a hydrogen δ-layer can be considered to be fully developed, but the temperature stability of the layer leaves much to be desired, and further we will discuss only the δ-channel created by boron atoms.…”

Section: Introductionmentioning

confidence: 99%

On possible new methods for δ-layer synthesis of the diamond transistor

Alekseyev¹,

Grigoriev²,

Ivanov³

et al. 2022

JAMT

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An upper estimate of the activation barrier Ea, overcome by boron atom during its adsorption on singular face of unalloyed diamond, has been obtained using quantum chemistry methods. This process is connected with the formation of boron-doped δ-layer in the unalloyed diamond, which is an integral part of the diamond transistor. The estimate of Ea was found to be approximately 6–7 eV. It is correspondent by the order of magnitude with floating electrode potential drop relative to stationary low-temperature plasma at electronic temperature above ~ 1 eV. Meanwhile, in the existing high-frequency plasma-enhanced CVD (MWCVD) technology used to create boron-doped δ-layers, the source of the δ-layer growth is high-energy boron ions with energies of hundreds of eV (and even units of keV) which enter the substrate from MW plasma. This energy that the ions acquire at the near-electrode voltage drop is clearly excessive and leads both to excessively high depth of ion penetration into the diamond and to large dispersion of this depth. This reduces the quality of the δ-layer and the transistor efficiency as a whole. At the same time, specificity of high-frequency plasma, created in the MW-resonator for the diamond growth, allows plasma modes and diamond growth both with large (units of keV) and small (units of eV) near-electrode voltage drops. This paper considers the possibility of switching between these two modes. The high-drop mode realizes the rapid growth of unalloyed diamond and the low-drop mode – high quality δ-layer.

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“…The simplicity of hydrogen termination to create a conductive channel in diamond makes it very popular in the diamond research community. However, the long-term stability of two-dimensional hole gas under high-power operation and the low mobility 4 at high carrier concentration potentially limit device performance in the long run, although some progress was shown with surface passivation 5,6 . Taking advantage of metal-to-insulator transition (MIT), another approach utilizes a heavily boron-doped diamond thin layer as the conduction channel, creating a δ-FET 7 .…”

Section: Introductionmentioning

confidence: 99%

Diamond FinFET without Hydrogen Termination

Huang

Bai

Lam

et al. 2018

Sci Rep

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In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.

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FET on hydrogenated diamond surface

Cited by 8 publications

References 25 publications

(Invited) High Power Diamond Devices with 2-D Transport Channels

(Invited) High Power Diamond Devices with 2-D Transport Channels

On possible new methods for δ-layer synthesis of the diamond transistor

Diamond FinFET without Hydrogen Termination

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