2004
DOI: 10.1103/physrevb.70.195204
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Ferromagnetism in transition-metal-dopedTiO2thin films

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Cited by 207 publications
(73 citation statements)
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“…[2][3][4][5][6][7][8][9][10] For practical spintronic applications DMS with Curie temperature, Tc, above RT are required. Many promising oxides like TiO 2 , ZnO and SnO 2 and III-V semiconductor GaN doped with transition metal ions have been reported to exhibit ferromagnetic behavior near or above room temperature, [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] but the origin of ferromagnetism in these systems is poorly understood. Oxide systems based on host semiconductor with high solubility of magnetic ions are highly desirable to form thermodynamically stable magnetic semiconductors.…”
mentioning
confidence: 99%
“…[2][3][4][5][6][7][8][9][10] For practical spintronic applications DMS with Curie temperature, Tc, above RT are required. Many promising oxides like TiO 2 , ZnO and SnO 2 and III-V semiconductor GaN doped with transition metal ions have been reported to exhibit ferromagnetic behavior near or above room temperature, [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] but the origin of ferromagnetism in these systems is poorly understood. Oxide systems based on host semiconductor with high solubility of magnetic ions are highly desirable to form thermodynamically stable magnetic semiconductors.…”
mentioning
confidence: 99%
“…Thin films of various non-magnetic transition metal oxides, including TiO 2 , SnO 2 and ZnO, have been found to exhibit room temperature ferromagnetism when doped with small concentrations of V, Cr, Co and other ions. In the case of anatase TiO 2 , Hong et al [2,3] have indicated that vanadium is the most promising dopant, as it leads to a giant magnetic moment of 4.23 µ B per dopant atom in the thin film, while Tian et al [4] have recently observed ferromagnetism in both rutile and anatase TiO 2 thin films doped with 4 at.% vanadium. Although the nature of room temperature ferromagnetism in these oxides is not completely understood yet, most authors now agree that oxygen vacancies play an important role in the magnetic behaviour, at least in the case of TiO 2 .…”
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confidence: 99%
“…For instance, RT ferromagnetism has been reported in Fe, Co and Ni doped semiconductors of oxide and nitride. [3,4,5,6] However, the clustering of magnetic impurities and the formation of secondary phases often make the ferromagnetism extrinsic and prevent their further applications. Moreover, the doped magnetic elements do not lead to ferromagnetism definitely and experiments often found that ferromagnetism had close relation to the presence of intrinsic vacancies.…”
Section: Introductionmentioning
confidence: 99%