Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

Demidov, E. S.; Danilov, Yu. A.; Podolskii, Vladimir V.; Lesnikov, V. P.; Сапожников, М. В.; Сучков, А. И.

doi:10.1134/s0021364006120095

Cited by 11 publications

(28 citation statements)

References 7 publications

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“…The usual reflective x-ray and electron diffraction do not allowe to define this structure (in x-ray diffraction because of small thickness of layers and too small weight of Si atoms and in electron diffraction possibly because of masking by amorphous surface oxide layer). Here we represent new data about structure of our layers DMS Si:Mn/GaAs recently obtained with application of high resolution transmission electronic microscopy (HRTEM) and selected area electron diffraction (SAED).The PLD technology fabrication of DMS Si:Mn on single crystal GaAs substrates with (100) orientation was described in [17,18]. Measurements of cross-section HRTEM and SAED were made on JEOL device JEM-2100F.…”

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confidence: 99%

“…In paper 15 for layers with 0.8% peak atomic fraction of Mn the ferromagnetism, according to magnetization, was shown up to 400К. In work 16 the layers with concentration of Mn (2.7-5.9)·10 20 cm -3 showed ferromagnetism up to 305К on magnetization and Faraday effect data.The most high-temperature DMS on basis of diamondlike semiconductors GaSb, InSb, Ge and Si doped by Mn or Fe were synthesized in our laboratory by PLD [17][18] . The mainly investigated by us DMS Si:Mn with 10-15 % Mn has greatest mobility of current carriers, the Mn impurity in it shows high electric and magnetic activity.…”

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High-temperature diamond-like Si-based ferromagnet with self-organized superlattice distribution of Mn impurity

Demidov¹,

Pavlova²,

Bobrov³

2013

Jetp Lett.

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Crystal structure of Si:Mn diluted magnetic semiconductor with Curie temperature 500К, deposited from laser plasma on GaAs(100) substrates, was investigated by high-resolution transmission electronic microscopy and diffraction. This laser technology allows to reach of solid solution of 15%Mn in silicon with high electrical and full magnetic activity, conservation of diamondlike crystal structure and epitaxy growth of Si:Mn. The self-organized formation of superlattice structures takes place with period equal to trebled distance between nearest atomic layers (110) and interval between layers (110) which are doped by Mn atoms and oriented along direction of growth of 50 nm Si:Mn film.To necessity to fill a gap between microelectronics and magnetic electronics J. K. Furdyna 1 had paid attention in 1988. The first ferromagnetic so-called diluted magnetic semiconductors (DMS) on basis of compounds II-VI 2,3 and III-V 4 were synthesized in 90s of last century. Now there are a lot of publications devoted to epitaxy layers of DMS Ga 1-x Mn x As with atomic fraction of Mn impurity x≈0.05 and perfect crystal structure grown up at low temperatures ≈250°С by molecular beam epitaxy (MBE). However maximum attained Curie point of this ferromagnetic Ga 1-x Mn x As 170К is below room temperature 5. Especially interesting DMS are on basis of elementary silicon semiconductor because of their compatibility with the most widespread silicon technology. Numerous attempts of synthesis ferromagnetic DMS on basis of silicon, doped by 3d -impurities, were undertaken [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] . The problem of synthesis such DMS is even more difficult than in case of III-V compounds because of the close to equilibrium solubility of middle 3d -iron group elements impurities in Si is about 10 16 cm -3 on two order more low, these impurities mainly occupy position of interstitials and show donor properties 23,24 . Though, according to regularities in recharge levels of such impurities in diamond like semiconductors, the most preferable analogue of manganese in compounds III-V in silicon is iron 18,25 , the greatest successes have been reached by doping of Si also by manganese. Encouraging preconditions have appeared still in 1993 6 . The ferromagnetic behavior up to 320К according to field dependence of magnetization was observed for periodic structure of 20 nm layers of Si and Mn fabricated by electron beam vacuum evaporation (EBVE). The layers of DMS Si:Mn with about 5% Mn and T c =70К, according to abnormal Hall effect (AHE), were produced on silicon substrates (Si:Mn/Si) at 300°С by MBE technology as well as in case of DMS on basis of compounds III-V 7 . The single crystal layers of Si:5%Mn/Si were made by EBVE method 9,10 with ferromagnetism on magnetization data up to 400К. However DMS's rather high resistivity (0.25-2.5) Ohm·cm with semiconductor dependence ρ=ρ 0 exp(E a /kT) means absence of degeneration of semiconductor. The degeneration is necessary for realization of the most probable in DMS fe...

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confidence: 99%

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confidence: 99%

High-temperature diamond-like Si-based ferromagnet with self-organized superlattice distribution of Mn impurity

Demidov¹,

Pavlova²,

Bobrov³

2013

Jetp Lett.

Self Cite

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“…Via this technique, Mn doping was found to be extremely sensitive to growth conditions, particularlly to the growth temperature. Excellent work in this aspect can be found in references (Jamet et al, 2006, Ahlers et al, 2006b, Park et al, 2001, Bougeard et al, 2006, Li et al, 2007, Demidov et al, 2006, Pinto et al, 2005b. In general, at low growth temperatures (T b < 120 o C), the diffusion of Mn atoms leads to the formation of Mn-rich nanostructures, such as nanocolumns (Devillers et al, 2007) and nanodots (Bougeard et al, 2006) with irregular shapes.…”

Section: Overview Of the Mn Doped Gementioning

confidence: 99%

“…However, extensive experiments revealed that Mn-rich precipitates were developed and buried in a crystalline Ge matrix (Park et al, 2005, Lin et al, 2008, Verna et al, 2006, D'Orazio et al, 2002, Liu et al, 2004, Lifeng et al, 2004 in a much similar manner to that of the thin films grown by MBE (Park et al, 2001, Bougeard et al, 2006, Li et al, 2007, Demidov et al, 2006.…”

Section: Overview Of the Mn Doped Gementioning

confidence: 99%

“…There is also considerable interest for transition metal doped group IV semiconductors (Miyoshi et al, 1999, Park et al, 2002, Tsui et al, 2003, D'Orazio et al, 2004, Li et al, 2005, Demidov et al, 2006, Jamet et al, 2006, Collins et al, 2008, Ogawa et al, 2009, Tsuchida et al, 2009) to the semiconductor industry, owing in part to their excellent compatibility with silicon process technology. Several transition metals -including the use of single and co-doping of elements such as Mn, Cr, Co, Fe, Co-Mn, and Fe-Mn -have been used as magnetic dopants in both Si and Ge either through blanket implantation or through in-situ doping during epitaxial growth process.…”

Section: Introductionmentioning

confidence: 99%

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