Ferromagnetism in cobalt-implanted ZnO

Norton, D. P.; Overberg, M. E.; Pearton, S. J.; Pruessner, K.; Budai, J. D.; Boatner, L. A.; Chisholm, Matthew F.; Lee, J. S.; Khim, Z. G.; Park, Y. D.; Wilson, R. G.

doi:10.1063/1.1637719

Cited by 255 publications

(112 citation statements)

References 34 publications

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“…Results are interpreted in terms of a spin-split donor impurity band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold. The variation of the ferromagnetism with oxygen pressure used during film growth is evidence of a link between ferromagnetism and defect concentration.PACS Numbers: 75.50.Pp; 75.30.Hx;75.30.Gw;75.70 [2][3][4][5][6] or another transition element [7][8][9][10]. The results are sensitive to the form of the sample and preparation method.…”

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confidence: 77%

Anisotropic Ferromagnetism in Substituted Zinc Oxide

et al. 2004

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Abstract. Room-temperature ferromagnetism is observed in (110) oriented ZnO films containing 5 at % of Sc, Ti, V, Fe, Co or Ni, but not Cr, Mn or Cu ions. There are large moments, 1.9 and 0.5µ B /atom for Co-and Ti-substituted oxides, respectively. Scsubstituted ZnO shows also a moment of 0.3 µ B /Sc. Magnetization is very anisotropic, with variations of up to a factor three depending on the orientation of the applied field relative to the R-cut sapphire substrates. Results are interpreted in terms of a spin-split donor impurity band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold. The variation of the ferromagnetism with oxygen pressure used during film growth is evidence of a link between ferromagnetism and defect concentration.PACS Numbers: 75.50.Pp; 75.30.Hx;75.30.Gw;75.70 [2][3][4][5][6] or another transition element [7][8][9][10]. The results are sensitive to the form of the sample and preparation method. Other studies found lower magnetic ordering temperatures [11][12][13][14], or no ferromagnetism at all above 3 K for any 3d dopant [15]. In the absence of an exchange mechanism which could account for a high Curie temperature at doping levels far below the percolation threshold, these reports have been received with skepticism, and the belief that the ferromagnetism must somehow be associated with clustering or incipient formation of secondary phases. But there is spectroscopic evidence that divalent cobalt does indeed substitute on the tetrahedral sites of the wurtzite structure [1,11,17], with a wide solid solubility range [15]. A search by Rode et al [4] revealed no evidence for phase segregation in Co-doped ZnO films.Nevertheless, until a clear connection between the magnetic properties and electronic structure can be shown, doubts that doped zinc oxide is truly a magnetic semiconductor will persist.We recently proposed a model for high-temperature ferromagnetism in dilute n-type

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confidence: 77%

Anisotropic Ferromagnetism in Substituted Zinc Oxide

et al. 2004

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“…Thin films of Zinc Oxide can also be used in chemical sensors which are highly sensitive gas detectors [5] [6]. Recently, Sn-doped ZnO (ZnO:Sn) has attracted great attention because it can expand the applications of Undoped ZnO in optical components fields [7] [8], microelectronic devices [9] and diluted magnetic semiconductors [10]. ZnO and ZnO:Sn can be used as transparent conducting electrode in solar cells [11] [12].…”

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confidence: 99%

Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Zegadi¹,

Abdelkebir²,

Chaumont³

et al. 2014

AMPC

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In this work, Undoped Zinc Oxide (ZnO) and Sn-doped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer's formula and found to be in the range of 23 -40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.

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“…The implantation of various semiconductors with magnetic ions in the search for possible DMS systems has been found to be effective [19]. A few recent studies on electrical, magnetic and optical properties of cobalt ion-implanted GaN [20,21] and ZnO [22,23] films have been reported. However, there are not many reported experimental studies on Co + implanted GaN as a function of annealing temperature in the literature.…”

Section: Introductionmentioning

confidence: 99%