Ferromagnetic resonance in Mn₅Ge₃ epitaxial films with weak stripe domain structure

Solid-state synthesis and characterization of ferromagnetic Mn5Ge3 nanoclusters in GeO/Mn thin films

“…The spectrum from the sample annealed at 300ºC (Figure 8a) contained contributions with binding energies of 32.6 eV, 30.7 eV, and 29.5 eV, which can be attributed to GeO 2 , GeO [38], and metallic Ge 0 , respectively [37,38]. This corroborates with the disproportionation of GeO via reaction (1). For both samples, the Ar + etching causes the atomic O/Ge ratio reduction to about 1 and some shifts of the GeO (Ge 2+ ) peaks due to an additional decomposition of GeO (Figure 8a).…”

“…Our findings are in good agreement with previously published results of the formation of Ge nanoclusters in GeO film by annealing [30][31][32][33][34][35] and an important contribution is the detection of the low initiation temperature T in = 180°C of reaction (1). Figure 8a shows the photoelectron Ge 3d spectra of as-deposited GeO film (1,2) and that after annealing at 300ºC (3,4) collected before (1,3) and after etching with Ar + ions to remove an oxidized surface layer (2,4). The binding energy of 31 eV for the main peak, along with the atomic ratio O/Ge slightly above 1, indicate that a nearly stoichiometric GeO oxide was fabricated in the as-deposited sample underneath the surface of the GeO 2 (Figure 8b) [36].…”

“…In recent years, the synthesis features and structural, electronic and magnetic properties of ferromagnetic Mn 5 Ge 3 films have been intensively studied for future applications in spintronics [1][2][3][4][5]. An important advantage of Mn 5 Ge 3 is a sufficiently high spin polarization [6,7] and epitaxial growth on Ge (111) and Ge (001) substrates by solid-phase epitaxy [8][9][10][11].…”

Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

“…The increase of g-factor with the decrease of temperature indicates a surface contribution to magnetic interactions. Considering the low thickness of the film (5 nm), the magnetization on the surface is comparable to the bulk and the interaction of both leads to temperature-dependent shift of the FMR line to lower fields [30]. It has been known that strong spin-orbit coupling can cause higher values of g-factors in ferromagnetic nanostructures and thin films [31,32].…”

Structure and Magnetism of Mn5Ge3 Nanoparticles

“…There are several reports on the magnetic and structural properties of Mn 5 Ge 3 in the form of thin films [23,24], nanoislands [25], and nanomagnets embedded in semiconductor matrices by ion implantation and molecular beam epitaxy [26,27,28,29,30]. It has been reported that, regardless of the fabrication method used, precipitates of small Mn 5 Ge 3 nanoclusters may occur due to the high growth temperature as well as the Mn content exceeding the low solubility in Ge [31,32,33].…”