Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

Zaı̆tsev, S. V.; Дорохин, М. В.; Brichkin, A. S.; Vikhrova, O. V.; Danilov, Yu. A.; Звонков, Б. Н.; Kulakovskiĭ, V. D.

doi:10.1134/s0021364009220056

Cited by 46 publications

(52 citation statements)

References 19 publications

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“…Here the FM works as spin separator redistributing the spins spatially. The former mechanism is expected for FM/QW hybrids [13][14][15] , whereas the latter is demonstrated via the spin injection/reflection of free electrons at a FM-SC interface 3,5,6,20,24 . Here we show unambiguously that, in contrast to previous expectations [13][14][15] , the spin polarization in GaMnAs-based FM/QW hybrid is a non-equilibrium, dynamic one.…”

Section: Discussionmentioning

confidence: 99%

“…The former mechanism is expected for FM/QW hybrids [13][14][15] , whereas the latter is demonstrated via the spin injection/reflection of free electrons at a FM-SC interface 3,5,6,20,24 . Here we show unambiguously that, in contrast to previous expectations [13][14][15] , the spin polarization in GaMnAs-based FM/QW hybrid is a non-equilibrium, dynamic one. Moreover, unlike 3,5,6,20,24 , the spin-separation effect considered here is due to the QW electrons and would take place even for the FM/QW hybrid embedded into insulating (that is, non-injection) structure.…”

Section: Discussionmentioning

confidence: 99%

“…At first sight, one may assume that an equilibrium spin polarization of SC charge carriers is established by the effective magnetic field due to the s(p)-d exchange interaction of the carriers with Mn-ions [13][14][15] . The degree ρ c is determined by the spin polarizations of electrons and/or holes, which, in turn, are proportional to the magnetization M(B) of FM.…”

Section: Spin Orientation Of Photoexcited Carriers By Fm Layermentioning

confidence: 99%

“…The creation of a flexible FM-SC system comprises the spin polarization of carriers in the QW and the FM control through the spin-polarized charge carriers. Today, researchers have addressed only the first step: spin polarization of charge carriers within a SC quantum well, owing to the interaction with a Mn-based FM, was evidenced by the circularly polarized photoluminescence (PL) 14,15 . This observation was interpreted as equilibrium polarization of the hole spins in the exchange field of the Mn spins, in accordance with the predictions of ref.…”

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confidence: 99%

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Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid

et al. 2012

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Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electronspin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Spin Orientation Of Photoexcited Carriers By Fm Layermentioning

confidence: 99%

mentioning

confidence: 99%

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Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid

et al. 2012

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“…Such a way of preparation allows tailoring the magnetic properties of the samples freely by changing the TM atoms' concentration or semiconductor spacer thickness and can yield to high Curie temperature. 8,9 In combination with high-mobility modulation-doped heterostructures [10][11][12][13] ferromagnetic (FM) DAs would become attractive for spin-transport applications, 14 provided that they remain magnetically ordered above room temperature.…”

Section: Introductionmentioning

confidence: 99%

Search for stable ferromagnets amongAIV/Fe digital alloys (AIV=Si, Ge) using first-principles calculations

et al. 2012

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Using first-principles electronic structure calculations we investigate the existence of stable ferromagnets among the A IV /Fe digital alloys (A IV = Si,Ge), modeled as periodic sequence of Fe monolayers in the A IV host. Total-energy calculations and the magnetic force theorem are exploited for accurate determination of the magnetic ordering. To estimate the critical temperatures, Monte Carlo simulations are employed, while the renormalization-group analytical expressions are applied to assess the impact of the interlayer exchange on the critical temperature values. According to our results, among the systems under consideration only the Ge-based alloys feature a stable ferromagnetic ordering at nonzero temperature. The critical temperatures of these systems were found to be strongly dependent on the underlying crystal structure.

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Resonant enhancement of indirect exchange interaction in semiconductor heterostructures

Rozhansky

Аверкиев

Krainov

et al. 2014

Physica Status Solidi (a)

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We present an approach to calculate indirect exchange interaction between paramagnetic ions via free carriers in heterostructures. Unlike well‐known Ruderman–Kittel–Kasuya–Yosida (RKKY) theory the suggested method is not a perturbation theory and thus can be used in the wider variety of cases, especially when resonant effects are important. The method is applied to standard 1D and 2D indirect exchange problems. We further focus on calculation of indirect exchange interaction between two ions mediated by 2D free carriers gas separated by a tunnel barrier. The calculations show that if the ion bound state energy lies within the energy range occupied by the free 2D carriers, the indirect exchange interaction is strongly enhanced due to resonant tunneling and far exceeds what one would expect from the conventional RKKY approach.

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Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

Cited by 46 publications

References 19 publications

Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid

Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid

Search for stable ferromagnets amongAIV/Fe digital alloys (AIV=Si, Ge) using first-principles calculations

Resonant enhancement of indirect exchange interaction in semiconductor heterostructures

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