Ferromagnetic and transport properties of highly Mn-doped ZnSnAs2 epitaxial layers on InP substrates

Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography

“…Figures 6(a The intensity of an atomic image is basically proportional to the atomic number and inversely proportional to the distance from the origin. Since the atomic number of As (33) is 82.5% of the average of the atomic numbers of Zn (30) and Sn (50), the atomic number does not cause a significant decrease in the As image intensity. In addition to the above factors, the image intensity decreases with the positional fluctuations of atoms.…”

“…Considering the ZnSnAs 2 thin film as a host material for magnetic doping, the buffer-like layers should play a very important role in achieving a Mn doping level as high as 10%. 33 In the case of GaMnAs, the ferromagnetic nature appears upon the substitution of Mn impurities for Ga atoms. The Curie temperature T C increases with the Mn concentration, reaches a maximum of 110 K approximately 6% Mn concentration, and then decreases with the further increase of Mn concentration.…”

Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates

“…[10][11][12][13][14][15] In recent years, Mndoped ZnSnAs 2 thin films, (Zn, Mn, Sn)As 2 , have attracted interest because of their ferromagnetic behavior above-roomtemperature in addition to their promise of compatibility with InP-based heterostrutures. 16,17) Through an X-ray fluorescence holographic study using a strong X-ray beam generated by 3rd generation synchrotron radiation at the Spring-8 facility, we have found that Mn atoms occupy both Zn and Sn cation sites. 18) In a previous study, with the aid of three-dimensional atom probe tomography, 19) the possibility of spinodal decomposition phases in (Zn, Mn, Sn)As 2 thin films was also demonstrated.…”