Ferromagnetic-a ntiferromagnetic phase transition in Mn2Sb(Sn) solid solutions

Рыжковский, В. М.; Dymont, V. P.; Erofeenko, Z. L.

doi:10.1002/pssa.2211300119

Cited by 9 publications

(7 citation statements)

References 10 publications

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“…4͒ as expected for a first order transition. Moreover, the saturation magnetization of Mn 2 Sb 0.85 Sn 0.15 is larger than that of Mn 2 Sb 0.6 Sn 0.4 , which is in agreement with early experiment 10 indicating that the substitution of Sb atoms by Sn atoms in the nonmagnetic sublattice leads to the quantitative redistribution of the sublattice magnetizations of Mn1 and Mn2. With the Sn concentration increasing, the antiferromagnetic exchange interaction of Mn1 and Mn2 becomes stronger, to make the phase transition temperature shift to high temperature ͑see Fig.…”

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confidence: 89%

“…10 The considerable temperature hysteresis of the electrical resistance was reported. 10 It is evident that a partial substitution of Sb by Sn causes the transition from the FI to the AF phase at a certain temperature (T FI-AF ), which is in good agreement with earlier work, 10,11 where the magnetic transition was verified by using direct magnetic measurements and the Mössbauer effect. The transition temperature is quite sensitive, not only to the applied magnetic field, but also to the Sn concentration.…”

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Metamagnetic-transition-induced giant magnetoresistance inMn2Sb1−x

Zhang

2003

Phys. Rev. B

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In Mn 2 Sb 1Ϫx Sn x (0Ͻxр0.4) compounds, a metamagnetic transition from antiferromagnetic to ferrimagnetic can be induced by an external field, with which a giant magnetoresistance ͑GMR͒ effect is associated. The largest GMR ratio of 60% for Mn 2 Sb 0.85 Sn 0.15 is achieved at 142 K at a field of 5 T. The field dependence of GMR and the magnetization of Mn 2 Sb 0.6 Sn 0.4 confirm that the field-induced metamagnetic transition gives rise to the GMR effect in the system. The origin of the GMR effect is discussed in terms of the reconstruction of Fermi surface due to the collapse of the super zone gap after the metamagnetic transition.

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confidence: 89%

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confidence: 99%

Metamagnetic-transition-induced giant magnetoresistance inMn2Sb1−x

Zhang

2003

Phys. Rev. B

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“…Finally, exploiting memory effects such as those described here require materials that display near room temperature AFM to FM transitions. Fortunately several alloys, such as Mn 2 Sb and related compounds 17 – 19 are already known.…”

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Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic

Clarkson

Fina

Liu

et al. 2017

Sci Rep

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The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition. This approach provides us with a pathway to "hide" or "reveal" a given ferromagnetic region at zero magnetic field. By converting the AFM phase into the FM phase, the stray field, and hence sensitivity to external fields, is decreased or eliminated. Using detailed structural analyses of FeRh films of varying crystalline quality and chemical order, we relate the direct nanoscale origins of this memory effect to site disorder as well as variations of the net magnetic anisotropy of FM nuclei. Our work opens pathways toward a new generation of antiferromagnetic -ferromagnetic interactions for spintronics.In recent years, the ever increasing need for large scale data storage in computing systems has kindled significant interest in new materials and new physical phenomena that could lead to denser and more energy efficient memory systems. One approach is the heat assisted magnetic recording (HAMR) for which low Neel temperature AFMs have been suggested to play a key role 1 . In this context, the AFM to FM phase transition makes FeRh a serious contender for insertion into heterostructures utilizing exchange bias. Typically, in magnetic systems, defects impede domain wall motion, increase the coercivity, lower magnetization, and decrease spin polarization. Going beyond this traditional thinking, in this work we demonstrate that it is possible to exploit crystalline defects in FeRh to

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“…As a consequence, the Mn 2 Sb compound is a ferrimagnet below its Curie temperature T C = 550 K. 1 In addition to the phase transition from a paramagnetic state to a ferrimagnetic (FI) state, compounds with substituted elements (Co, Cr, Cu, and V) for Mn, as well as of Ge and Sn for Sb, exhibit another phase transition to an antiferromagnetic (AF) state as the temperature decreases. 2 Below the FI-AF transition temperature, a metamagnetic transition from AF to FI state can be induced by an applied external field, with which a large magnetoresistance (MR) effect is associated. [3][4][5] In our previous work, 3 the magnetotransport behavior across the metamagnetic transition from a low-field and low-temperature AF state to a high-field and high-temperature FI state was studied for Mn 2 Sb 1−x Sn x ͑0 Ͻ x ഛ 0.4͒ compounds.…”

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First-order nature of a metamagnetic transition and mechanism of giant magnetoresistance inMn2Sb0.95Sn0.05

Zhang

Aarts

2004

Phys. Rev. B

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Magnetization behavior across a metamagnetic transition from an antiferromagnetic state to a ferrimagnetic state is investigated in detail for compound Mn 2 Sb 0.95 Sn 0.05 . The study clearly brings out various generic features associated with a first-order transition, viz., the appearance of hysteresis and the coexistence of magnetic phases. We also observe that the magnetization versus field butterfly loops occurs, while the virgin curve lies outside the envelope magnetization curve. The electronic specific-heat coefficient at low temperatures increases with increasing applied magnetic field, after the field is larger than the critical transition field. This is direct evidence of the formation of a super-zone gap that yields the change of density of electric states and further proves that the large magnetoresistance effect in intermetallic compounds is originated from the reconstruction of Fermi surface due to the collapse of the super-zone gap after the metamagnetic transition.

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Ferromagnetic-a ntiferromagnetic phase transition in Mn2Sb(Sn) solid solutions

Abstract: The results of comprehensive X‐r ay, magnetic, and electrical studies on the alloys Mn2Sb1−ySny (y ≤ 0.3) in the range of the ferrimagnetic‐a ntiferromagnetic phase transition are reported. A composition‐t emperature magnetic phase diagram is plotted.

Cited by 9 publications

References 10 publications

Metamagnetic-transition-induced giant magnetoresistance inMn2Sb1−x

Metamagnetic-transition-induced giant magnetoresistance inMn2Sb1−x

Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic

First-order nature of a metamagnetic transition and mechanism of giant magnetoresistance inMn2Sb0.95Sn0.05

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