Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions

Kreuzer, Stephan; Rahm, M.; Biberger, J.; Pulwey, Ralph; Raabe, Jörg; Schuh, Dieter; Wegscheider, Werner; Weiss, Dieter

doi:10.1016/s1386-9477(02)00589-1

Cited by 4 publications

(4 citation statements)

References 37 publications

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“…The iron films are broadly used in a wide range of the magnetic devices. Recently, Fe films interfaced with semiconductors materials have attracted particular attention owing to the possibility of new functionalities that arise from such hybridization of ferromagnetic metals and semiconductors 1 2 3 . Successful growth of high-quality crystalline Fe film on various semiconductor surfaces, such as GaAs 4 5 6 , ZnSe 6 7 , MgO 8 9 10 , and Ge 6 11 12 , by an epitaxial technique further adds to the interest in Fe/semiconductor combinations 13 .…”

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confidence: 99%

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Bac

Lee

et al. 2015

Sci Rep

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We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As expected, planar Hall resistance (PHR) measurements reveal the presence of four in-plane magnetic easy axes, indicating the dominance of the cubic anisotropy in the film. However, systematic mapping of the PHR hysteresis loops observed during magnetization reversal at different field orientations shows that the easy axes along the and are not equivalent. Such breaking of the cubic symmetry can only be ascribed to the presence of uniaxial anisotropy along the direction of the Fe film. Analysis of the PHR data measured as a function of orientation of the applied magnetic field allowed us to quantify the magnitude of this uniaxial anisotropy field as Oe. Although this value is only 1.5% of cubic anisotropy field, its presence significantly changes the process of magnetization reversal, revealing the important role of the uniaxial anisotropy in Fe films. Breaking of the cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason for this unexpected behavior.

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confidence: 99%

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Bac

Lee

et al. 2015

Sci Rep

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“…Previous experiments carried out on disks have shown that the measured Hall voltage maps nearly perfectly the corresponding calculated hysteresis trace. 11 In-plane magnetization reversal curves obtained by micro-Hall magnetometry from disks without defects are characterized by two distinct jumps at higher H ext and a nearly linear change of the Hall voltage in between. 7 While the jumps are due to nucleation and annihilation of a magnetic vortex, the smooth section stems from the reversible shift of the vortex's center perpendicular to the direction of H ext .…”

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confidence: 99%

Influence of point defects on magnetic vortex structures

Rahm

Hoellinger

Umansky

et al. 2004

Journal of Applied Physics

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We employed micro-Hall magnetometry and micromagnetic simulations to investigate magnetic vortex pinning at single point defects in individual submicron-sized Permalloy disks. Small ferromagnetic particles containing artificial point defects can be fabricated by using an image reversal electron beam lithography process. Corresponding micromagnetic calculations, modeling the defects within the disks as holes, give reasonable agreement between experimental and simulated pinning and depinning field values.

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“…With parallel magnetizations, the tunneling occurs between majority (and minority) bands whereas in a junction with antiparallel magnetizations carriers tunnel from majority to minority bands (and vice versa). The resulting spin current mismatch produces a larger contact resistance in the antiparallel case, an effect known as the tunneling magnetoresistance (TMR) [2,3,4,5,6,7,8,9,10,11,12,13,14].…”

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confidence: 99%

Nonmonotonic inelastic tunneling spectra due to surface spin excitations in ferromagnetic junctions

Tkachov

2011

Eur. Phys. J. B

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The paper addresses inelastic spin-flip tunneling accompanied by surface spin excitations (magnons) in ferromagnetic junctions. The inelastic tunneling current is proportional to the magnon density of states which is energy-independent for the surface waves and, for this reason, cannot account for the bias-voltage dependence of the observed inelastic tunneling spectra. This paper shows that the bias-voltage dependence of the tunneling spectra can arise from the tunneling matrix elements of the electron-magnon interaction. These matrix elements are derived from the Coulomb exchange interaction using the itinerantelectron model of magnon-assisted tunneling. The results for the inelastic tunneling spectra, based on the nonequilibrium Green's function calculations, are presented for both parallel and antiparallel magnetizations in the ferromagnetic leads.

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Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions

Cited by 4 publications

References 37 publications

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Influence of point defects on magnetic vortex structures

Nonmonotonic inelastic tunneling spectra due to surface spin excitations in ferromagnetic junctions

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