Ferroelectrics / (La,Sr)2CuO4 epitaxial hetero-structure and hysteretic diode property

Nonvolatile programmable two-terminal diodes using a ferroelectric semiconductor

“…14 After a low-dc voltage (V dc ) was applied, the current increased and decreased repeatedly, reproducibly by a factor of 10-100, but the modulation was retained only for an hour. 15 These observations have been explained by the change of bandbending due to ͑i͒ charge injection at the ferroelectric surface or ͑ii͒ spontaneous polarization ( P s ). Furthermore, analysis of the carrier-transport process suggested a kind of pn junction formation in some ferroelectric heterojunctions, e.g., Pb͑Zr, Ti͒O 3 /SrTiO 3 , where the p type is the hole carrier type and the n type is the electron carrier type.…”

Electron-polarization coupling in superconductor-ferroelectric superlattices

“…As was assumed in 12,14,15,16 , the increase of T S c is connected with the formation of the accumulation layers (with charge carrier density enhanced due to the polarization directed toward the interface), whereas the polarization in the opposite direction induces a depletion layer with higher resistance and lower T S c . Besides critical temperature, ferroelectric polarization affects transport properties of SUFETs leading to a change in resistance of 9-25 % for PZT-YBCO and PZT-NdBa 2 Cu 3 O 7−δ (NBCO) heterostructures 17,18 and showing polarization-induced memory effects in resistance and current, which suggests their possible storage applications 19 .…”

Origins of Conduction at Domain Boundaries, LaAlO<inf>3</inf>/SrTiO<inf>3</inf> and Surface for Depolarization & Size Effect

“…The experimental observations of the above prediction (1) "e -/h + layer at polar discontinuities" are insufficient to verify the correctness of the theories [5][6][7][36][37][38]. This is because these theories treated ideal ferroelectrics where the effects of defects were insignificant, whereas e -/h + layer originating from defects [13][14][15][16][17][18][19][20][21][22][23][24][25] are prevailing owing to experimental difficulties.…”

“…1 were confirmed by ab initio calculations [8,9], the experimental results [1][2][3][4][5]10,11] can be due to conventional mechanisms, as evidenced in the failure of formation of both electron eand hole h + layer at the same locations by low field. Here, conduction originating from defects at domain boundaries [12][13][14][15] and the interfaces of heterostructures [16][17][18] and in bulk [19][20][21][22][23][24][25] have been established. High-field induced defects are also known [26,27] in the studies of resistance switching.…”