Ferroelectricity in zinc cadmium telluride

Weil, R.; Nkum, R.K.; Muranevich, E.; Benguigui, L.

doi:10.1103/physrevlett.62.2744

Cited by 102 publications

(36 citation statements)

References 16 publications

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“…ZnO has a simple binary AB structure with high-symmetry (wurtzite structure). Besides ZnO, Gedoped PbTe, a IV-VI narrow-gap semiconductor [16], and Zn-doped CdTe, a II-VI wide-gap semiconductor [17], have been investigated as materials of binary crystals accompanying ferroelectricity ( Figure 1). Moreover, recent works showed that thin films of HfO2-ZrO2 systems exhibit ferroelectricity [18,19].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectricity in Simple Binary Crystals

Onodera

Takeuchi

2017

Crystals

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Abstract:The origin of ferroelectricity in doped binary crystals, Pb 1−x Ge x Te, Cd 1−x Zn x Te, Zn 1−x Li x O, and Hf 1−x Zr x O 2 is discussed, while no binary ferroelectrics have been reported except for two crystals, HCl and HBr. The ferroelectricity is induced only in doped crystals, which shows an importance of electronic modification in chemical bonds by dopants. The phenomenological and microscopic treatments are given for the appearance of ferroelectric activity. The discovery of ferroelectricity in binary crystals such as ZnO and HfO 2 is of high interest in fundamental science and also in application for complementary metal-oxide semiconductor (CMOS) technology.

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Section: Introductionmentioning

confidence: 99%

Ferroelectricity in Simple Binary Crystals

Onodera

Takeuchi

2017

Crystals

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“…9,11,22 Within the non-oxide ferroelectrics, some chalcogenide and chalcohalide-based materials show promising ferroelectric characteristics, e.g. zinc cadmium 25 telluride (ZnCdTe) 24 and antimony sulfoiodide (SbSI) 25 . Within the polymer family, polyvinylidene fluoride (PVDF) and its copolymers with trifluoroethylene show excellent ferroelectric and piezoelectric characteristics.…”

Section: A Primer On Ferroelectric Materialsmentioning

confidence: 99%

Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

2013

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Nanostructured materials are central to the evolution of future electronics and information technologies. Ferroelectrics have already been established as a dominant branch in the electronics sector because of their diverse application range such as ferroelectric memories, ferroelectric tunnel junctions, etc. The on-going dimensional downscaling of materials to allow packing of increased numbers of components onto integrated circuits provides the momentum for the evolution of nanostructured ferroelectric materials and devices. Nanoscaling of ferroelectric materials can result in a modification of their functionality, such as phase transition temperature or Curie temperature (TC), domain dynamics, dielectric constant, coercive field, spontaneous polarisation and piezoelectric response. Furthermore, nanoscaling can be used to form high density arrays of monodomain ferroelectric nanostructures, which is desirable for the miniaturisation of memory devices. This review article highlights some research breakthroughs in the fabrication, characterisation and applications of nanoscale ferroelectric materials over the last decade, with priority given to novel synthetic strategies

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“…These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in It has been demonstrated that off-center site occupancy in semiconductor alloys may lead to a ferroelectric behavior, 1 which results from the large size mismatch between a substitutional atom and the host atom it replaces. The I-VI compound semiconductor Cd 1−x Zn x Te ͑CZT͒ was thereafter identified to be ferroelectric by Weil et al 2 The ferroelectricity in these binary mixed crystals is due to the large size mismatch between the ionic radii of Zn and Cd ͑Cd 2+ = 0.103 nm, Zn 2+ = 0.083 nm͒. An electric dipole is built up when a Zn ion occupies an off-center site along the ͗111͘ direction, similar to the case of lead zirconate titanate with a rhombohedral structure.…”

mentioning

confidence: 99%

“…The I-VI compound semiconductor Cd 1−x Zn x Te ͑CZT͒ was thereafter identified to be ferroelectric by Weil et al 2 The ferroelectricity in these binary mixed crystals is due to the large size mismatch between the ionic radii of Zn and Cd ͑Cd 2+ = 0.103 nm, Zn 2+ = 0.083 nm͒. An electric dipole is built up when a Zn ion occupies an off-center site along the ͗111͘ direction, similar to the case of lead zirconate titanate with a rhombohedral structure.…”

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confidence: 99%

Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals

Huang

Wang

et al. 2007

Applied Physics Letters

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The piezoelectric response in Cd 0.9 Zn 0.1 Te ͑CZT͒ semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in It has been demonstrated that off-center site occupancy in semiconductor alloys may lead to a ferroelectric behavior, 1 which results from the large size mismatch between a substitutional atom and the host atom it replaces. The I-VI compound semiconductor Cd 1−x Zn x Te ͑CZT͒ was thereafter identified to be ferroelectric by Weil et al. 2 The ferroelectricity in these binary mixed crystals is due to the large size mismatch between the ionic radii of Zn and Cd ͑Cd 2+ = 0.103 nm, Zn 2+ = 0.083 nm͒. An electric dipole is built up when a Zn ion occupies an off-center site along the ͗111͘ direction, similar to the case of lead zirconate titanate with a rhombohedral structure.3 Recently, CZT has received considerable attention because of its potential application in high resolution room temperature gamma radiation spectroscopy. 4 Attempts have also been made to use CZT for nonvolatile memory device applications due to its ferroelectricity and good match of lattice parameters with silicon. 5Writing and reading processes can be conducted on CZT wafers. 5It is well known that all ferroelectrics show piezoelectricity. This characteristic provides us an alternative way to characterize CZT for electronic applications. For instance, we can probe the piezoelectric response of CZT under a dc bias field. As pointed out by Li et al., an applied electric field will induce both a rapid effect and a slow effect in dielectrics. 6 A slow relaxation of field-induced piezoelectric resonance in paraelectric barium stannate titanate ͑BaTi 0.8 Sn 0.2 O 3 ͒ ceramics has already been found. 7 In this letter, we report the piezoelectric response in Cd 0.9 Zn 0.1 Te ferroelectric single crystal. A slow relaxation process was observed under an applied dc bias field. Discharging current was measured as a function of time to understand the slow relaxation process. The results show that the influence of the slow effect cannot be ignored in the application of II-VI type ferroelectric semiconductors especially when a bias electric field is applied.Cd 0.9 Zn 0.1 Te ingot was grown with a modified Bridgman method. High-purity ͑99.999 99% for all͒ raw materials of Cd, Zn, and Te were used to reduce the unintended impurities. In order to reduce the bulk conductivity, 30 ppm indium was introduced. 8 The ingot was cut along ͑111͒ surface with a dimension of 10ϫ 10ϫ 2 mm 3 . Gold electrodes with a...

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Ferroelectricity in zinc cadmium telluride

Cited by 102 publications

References 16 publications

Ferroelectricity in Simple Binary Crystals

Ferroelectricity in Simple Binary Crystals

Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals

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