Ferroelectricity in thin films driven by charges accumulated at interfaces

Teodorescu, Cristian M.

doi:10.1039/d0cp05617k

Cited by 17 publications

(23 citation statements)

References 44 publications

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“…At these length scales, ferroelectric properties and bias-induced phase transitions between nonpolar and polar states may be indirectly accessed by piezoresponse force microscopy (PFM). [41][42][43] We note that direct measurements of the antiferroelectric-like hysteresis loop by PFM are complicated even for prototypical AFE materials such as PbZrO 3 . [ 44 ] In many cases, materials showing constricted P -E macroscopic hysteresis loops yields FE like hysteresis loops on the nanoscale.…”

Section: Data Availabilitymentioning

confidence: 96%

“…Different types of mobile charge carriers may be involved in screening the ferroelectric polarisation at the interface. 41,414 For example, a detailed STEM-EELS study by Kim et al 496 of the BiFeO 3 /La 0.8 Sr 0.2 MnO 3 interface in a region of the sample containing two ferroelectric domains with opposite polarization shows that the domain with the ferroelectric polarization pointing away from the interface presents an out of plane lattice expansion of ∼5% in the BiFeO 3 interface region, together with a decrease in the Mn valency and a reduction in the O K edge intensity, which is interpreted as due to screening by oxygen vacancies; in contrast, the other polarization direction shows no such effects and screening is inferred to be purely electronic. 496 TABLE IV.…”

Section: Epitaxial Ferroelectric Interfacial Devicesmentioning

confidence: 99%

“…29,30 Ferroelectricity involves space inversion symmetry breaking and the spontaneous ferroelectric polarization can originate from a number of different microscopic mechanisms, including displacement of ions from high symmetry positions, electronic charge asymmetries (as in lone-pair ferroelectricity), charge ordering and/or disproportionation, and geometrical frustration. 9,[31][32][33][34][35][36][37][38][39][40] Hence, ferroelectric phenomena tend to be more challenging to investigate than their magnetic counterparts, 35,41 also due to the strong interaction with the electric fields generated by free electric charges and the strong coupling to lattice distortions, including strain, which often 4 This is the author's peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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Epitaxial ferroelectric interfacial devicesFerroelectric interfacial devices consist of materials systems whose interfacial electronic properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are modulated by a ferroelectric layer set in its immediate vicinity. While the prototypical example of such a system is the ferroelectric field effect transistor first proposed in the 1950s, only with the recent advances in the controlled growth of epitaxial thin films and heterostructures, and the recent physical understanding down to the atomic scale of screening processes at ferroelectric-semiconducting and -metallic interfaces made possible by first principles calculations, have the conditions been met for a full development of the field. In this review, we discuss the recent advances in ferroelectric interfacial systems, with emphasis on the ferroelectric control of the electronic properties of interfacial devices with well ordered (epitaxial) interfaces. In particular, we consider the cases of ferroelectric interfacial systems aimed at controlling the correlated state, including superconductivity, Mott metallic-insulator transition, magnetism, charge, and orbital order, and charge and spin transport across ferroelectric tunnel junctions. The focus is on the basic physical mechanisms underlying the emergence of interfacial effects, the nature of the ferroelectric control of the electronic state, and the role of extreme electric field gradients at the interface in giving rise to new physical phenomena. Such understanding is key to the development of ferroelectric interfacial systems with characteristics suitable for next generation electronic devices based on controlling the correlated state of matter.

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Section: Data Availabilitymentioning

confidence: 96%

Section: Epitaxial Ferroelectric Interfacial Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial ferroelectric interfacial devices

Vaz

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Rabe

et al. 2021

Applied Physics Reviews

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“…P pointing either towards (P -) or away from the interface (P + ) 5 are opposed by corresponding depolarizing field, compensated by the modulation of the LSMO charge carriers. Other possible extrinsic mechanisms such as such as adsorption of polar molecules at the FE surfaces may also have a contribution in stabilizing the ferroelectric state 23,24 For details on the FE state of the top layers see Section 1 and Fig. S1 from Supplementary Material (SM).…”

Section: Resultsmentioning

confidence: 99%

Ferroelectricity Modulates Polaronic Coupling at Multiferroic Interfaces

Husanu

Popescu

Hrib

et al. 2022

Preprint

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Physics of the multiferroic interfaces is currently understood mostly within a phenomenological framework including screening of the polarization field and depolarizing charges. Largely unexplored still remains the band dependence of the interfacial charge modulation, as well as the associated changes of the electron-phonon interaction, coupling the charge and lattice degrees of freedom. Here, multiferroic heterostructures of the colossal-magnetoresistance manganite La1-xSrxMnO3 buried under ferroelectric BaTiO3 and PbZrxTi1-xO3 are explored using soft-X-ray angle-resolved photoemission. The experimental band dispersions from the buried La1-xSrxMnO3 identify coexisting two-dimensional hole and three-dimensional electron charge carriers. The ferroelectric polarization modulates their charge density, changing the band filling and orbital occupation in the interfacial region. Furthermore, these changes in the carrier density affect the coupling of the 2D holes and 3D electrons with the lattice which forms large Froelich polarons inherently reducing mobility of the charge carriers. We find that the fast dynamic response of electrons makes them much more efficient in screening of the electron-lattice interaction compared to the holes. Our k-resolved results on the orbital occupancy, band filling and electron-lattice interaction in multiferroic oxide heterostructures modulated by the ferroelectric polarization disclose most fundamental physics of these systems needed for further progress of beyond-CMOS ferro-functional electronics.

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“…18 Ferroelectrics are high-dielectric materials that retain electric polarization, which is switchable with an external bias. The internal polarization in ferroelectrics is compensated with a surface charge that is available for direct charge injection 19,20 as well as induces an electric field. 21 Here, a layer within the superconductor as thin as the Thomas-Fermi screening length screens the bound charge of the ferroelectric.…”

mentioning

confidence: 99%

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Suleiman

Sarott

Trassin

et al. 2021

Applied Physics Letters

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Superconductivity serves as a unique solid-state platform for electron interference at a devicerelevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by voltage biasing at the nanometer scale, superconductive quantum devices cannot sustain voltage and are operated with magnetic fields, which impose a large device footprint, hindering miniaturization and scalability. Here we introduce a system of superconducting materials and devices that have a common interface with a ferroelectric layer. An amorphous superconductor was chosen for reducing substrate-induced misfit strain and for allowing low-temperature growth. The common quantum pseudowavefunction of the superconducting electrons was controlled by the non-volatile switchable polarization of the ferroelectric by means of voltage biasing. A controllable change of 21% in the critical temperature was demonstrated for a continuous film geometry. Moreover, a controllable change of 54% in the switching current of a superconducting quantum interference device (SQUID) was demonstrated. The ability to voltage bias superconducting devices together with the non-volatile nature of this system paves the way to quantum-based memory devices.

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Ferroelectricity in thin films driven by charges accumulated at interfaces

Abstract: Ferroelectricity in thin films is due to the interaction of elemental dipoles with charges accumulated at interfaces.

Cited by 17 publications

References 44 publications

Epitaxial ferroelectric interfacial devices

Epitaxial ferroelectric interfacial devices

Ferroelectricity Modulates Polaronic Coupling at Multiferroic Interfaces

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

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