Ferroelectricity in SbSI

Fatuzzo, E.; Harbeke, G.; Merz, Walter J.; Nitsche, R.; Roetschi, H.; Ruppel, Wolfgang

doi:10.1103/physrev.127.2036

Cited by 256 publications

(115 citation statements)

References 7 publications

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“…(16). If the applied field starts negatively at E < −Ec and the applied field is subsequently quasi-statically increased, then the polarization follows the lower curve and jumps to the upper curve when the coercive field Ec is exceeded.…”

Section: Numerical Resultsmentioning

confidence: 97%

Physical Kinetics of Ferroelectric Hysteresis

2004

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The physical kinetics of single domain ferroelectric materials are studied using Landau-Khalatnikov equation. The hysteretic curves are obtained numerically. The effective coercive electric field theoretically varies with the driving amplitude and frequency. The effects of thermal noise are explored using the Fokker-Planck kinetic equation. The ferroelectric switching times are discussed and Quantum effects are briefly explored.

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Section: Numerical Resultsmentioning

confidence: 97%

Physical Kinetics of Ferroelectric Hysteresis

2004

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“…Historically, bulk V-VI-VII compounds attracted tremendous interest in the 1960s due to promising ferroelectric properties. [21][22][23][24][25][26] The last 5 years have witnessed the renaissance of these materials for photovoltaic applications beyond perovskites, [27][28][29][30][31][32][33][34] because (i) orienting crystal growth perpendicular to the substrate sustains excellent carrier transport along the chains, (ii) benign grain boundaries parallel to the chains are free of dangling bonds and hence cause little recombination loss, [35] and (iii) needle-like crystals aligned in the translational direction of the growth exhibit better photovoltaic response than their higher dimensional counterparts. [36] For applications in field-effect transistors, the Achilles' heel of bulk V-VI-VII semiconductors is smaller band gap, lighter effective mass, and much higher dielectric constant than 2D MoS 2 , [2,17,29,32] which seriously reduces their potential.…”

Section: Introductionmentioning

confidence: 99%

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Peng

Zhang

et al. 2018

Advcd Theory and Sims

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Mechanical exfoliation of 2D materials has triggered an explosive interest in low dimensional material research. We extend this idea to 1D van der-Waals materials. Three 1D semiconductors (SbSeI, SbSI, and SbSBr) with high stability and novel electronic properties are discovered using first principles calculations. Both the dynamical and the thermal stability of these 1D materials are examined. We demonstrate that their nanowire thinner than 7Å can be easily obtained by mechanical exfoliation, hydrothermal method, or sonochemical method. The bulk-to-1D transition results in dramatic changes in band gap, effective mass, and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. These highly desirable properties render SbSeI, SbSI, and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

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“…1) was extensively studied in the 1960s as a photoactive ferroelectric semiconductor. [8][9][10][11][12] The Curie temperature for phase transition between the polar (Pna2 1 , C 2v symmetry) and paraelectric phases (Pnam, D 2h symmetry) was measured to be 295 K. 8 In this structure class, c is the polar axis and the phase transition is associated with a shift in the Sb and S sublattice with respect to I along this direction. 13 The ferroelectric behaviour of SbSI can be associated with the 5s 2 lone pair electrons of Sb 3þ .…”

mentioning

confidence: 99%

Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

Butler

McKechnie

Azarhoosh

et al. 2016

Applied Physics Letters

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The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s2 electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3–5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds

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Ferroelectricity in SbSI

Cited by 256 publications

References 7 publications

Physical Kinetics of Ferroelectric Hysteresis

Physical Kinetics of Ferroelectric Hysteresis

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

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