2017
DOI: 10.1063/1.4998336
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Ferroelectricity in Lu doped HfO2 layers

Abstract: Doped HfO2 has become a promising candidate for non-volatile memory devices since it can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have been investigated for the stabilization of ferroelectric HfO2. Here, we report the fabrication of capacitors comprising ferroelectric HfO2 metal-insulator-metal structures with TiN bottom and top electrodes using the dopant Lu. Amorphous 5% Lu doped HfO2 was deposited by pulsed laser deposition and afterwards annealed to achieve the fe… Show more

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Cited by 32 publications
(21 citation statements)
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“…Five mol % Lu 3+ doped HfO 2 system possesses P r of 11 μC/cm 2 and endurance of 10 6 cycles. 305 The ferroelectric properties are comparable to Gd 3+ and Y 3+ doped HfO 2 systems. Recently, the ferroelectricity of Ca 2+ doped HfO 2 was discovered, and a maximum P r of 10.5 μC/cm 2 along with an endurance of 7 × 10 6 were obtained.…”
Section: Chemical Reviewssupporting
confidence: 81%
See 1 more Smart Citation
“…Five mol % Lu 3+ doped HfO 2 system possesses P r of 11 μC/cm 2 and endurance of 10 6 cycles. 305 The ferroelectric properties are comparable to Gd 3+ and Y 3+ doped HfO 2 systems. Recently, the ferroelectricity of Ca 2+ doped HfO 2 was discovered, and a maximum P r of 10.5 μC/cm 2 along with an endurance of 7 × 10 6 were obtained.…”
Section: Chemical Reviewssupporting
confidence: 81%
“…Because of the ferroelectricity in the HfO 2 film system, the research concerning aliovalent doping mainly focuses on how to optimize the ferroelectric properties and corresponding switching endurance. The typical acceptor dopants are Al 3+ , Gd 3+ , ,,, La 3+ , , Sr 2+ , Y 3+ , , Lu 3+ , Ca 2+ , Sc 3+ , Mg 2+ , Ba 2+ , Ga 3+ , Nd 3+ , Sm 3+ , Er 3+ , In 3+ , Co 3+ , and Ni 2+ . The representative donor is Nb 5+ .…”
Section: Incipient Ferroelectricsmentioning
confidence: 99%
“…Up until now, the FE property in HfO 2 has been enhanced by incorporating with various dopants (Si, Al, Ca, Y, Sr, Lu, Gd, and La), , using a HfO 2 –ZrO 2 solid solution, , and even using undoped HfO 2 . , The AFE property has been seen in HfO 2 doped with a specific quantity of Si, Al, or Hf x Zr 1– x O 2 (0 ≤ x < 0.5) and La-doped HZO thin films. ,, Fluorite-based FE materials have been widely studied for memory applications such as ferroelectric field-effect transistors, negative capacitance field-effect transistors, and ferroelectric random access memory. ,,, In comparison to the significant research into FE materials, fluorite-based AFE materials have gained attention only very recently for energy-related applications such as energy storage, energy harvesting, solid-state cooling, and infrared detectors. , , Fluorite-based AFE materials are also recommended for use in memory devices such as AFE random access memory…”
Section: Fluorite-based Materialsmentioning
confidence: 99%
“…HfO 2 -based FE materials are appropriate for memory applications, such as ferroelectric random-access memory (FeRAM) and ferroelectric field-effect transistor (FeFET). Besides memory applications, these materials can also be suitable options for infrared (IR) sensors, pyroelectric energy harvesters, and solid-state cooling devices. The origin of ferroelectricity in the HfO 2 -based materials is ascribed to the formation of a noncentrosymmetric Pca2 1 orthorhombic phase . FE properties can be induced in HfO 2 with several dopants (such as Si, Al, Ca, Y, Sr, Lu, Gd, and La), ,, solid solution of HfO 2 -ZrO 2 , , as well as undoped HfO 2 . In contrast to FE behavior, AFE properties are induced in HfO 2 with a limited number of dopants (such as Al, Si, and a solid solution of HfO 2 -ZrO 2 ) and Al- or Si-doped Hf 0.5 Zr 0.5 O 2 . ,, The origin of the AFE properties is attributed to the electric field-induced phase transitions between the nonpolar tetragonal phase ( P 4 2 / nmc ) and the polar orthorhombic phase ( Pca 2 1 ), resulting in a double hysteresis loop. ,, However, this property is different from the antiferroelectricity originating from the antiparallel dipole moments arrangements. In the conventional AFE materials, such as lead-based ceramics (PbZrO 3 ), the unit cell of AFE materials also has a noncentrosymmetric structure.…”
Section: Introductionmentioning
confidence: 99%