“…Up until now, the FE property in HfO 2 has been enhanced by incorporating with various dopants (Si, Al, Ca, Y, Sr, Lu, Gd, and La), ,− using a HfO 2 –ZrO 2 solid solution, , and even using undoped HfO 2 . , The AFE property has been seen in HfO 2 doped with a specific quantity of Si, Al, or Hf x Zr 1– x O 2 (0 ≤ x < 0.5) and La-doped HZO thin films. ,,− Fluorite-based FE materials have been widely studied for memory applications such as ferroelectric field-effect transistors, negative capacitance field-effect transistors, and ferroelectric random access memory. ,,, In comparison to the significant research into FE materials, fluorite-based AFE materials have gained attention only very recently for energy-related applications such as energy storage, energy harvesting, solid-state cooling, and infrared detectors. ,− ,− Fluorite-based AFE materials are also recommended for use in memory devices such as AFE random access memory…”