Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films

Silva, José; Istrate, Marian Cosmin; Hellenbrand, Markus; Jan, Atif; Becker, Maximilian T.; Symonowicz, Joanna; Figueiras, F.; Lenzi, Veniero; Hill, Megan O.; Ghica, Corneliu; Romanyuk, Konstantin; Gomes, M. J. M.; Martino, Giuliana Di; Marques, L.; MacManus‐Driscoll, Judith L.

doi:10.1016/j.apmt.2022.101708

Cited by 10 publications

(5 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with other antiferroelectric materials, it has superior E BDS and fatigue resistance, and has more promising application prospects [14][15][16][17][18]. Additionally, there are methods to enhance the electrical properties of thin films by means of calculations and doping [19][20][21]. In recent years, there have been numerous reports on lead zirconate and PZ-based energy storage films, including (Pb, La) ZrO 3 , (Pb, La) (Zr, Ti) O 3 , (Pb, La) (Zr, Sn, Ti) O 3 and so on [22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition

Zheng,

Liu,

Wang

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

In this paper, we fabricated PbZrO3 (PZ) thin films by the way of sol–gel spin on LaNiO3 buffered SiO2/Si substrates, and annealed them at different given temperatures by rapid thermal annealing (RTA). By controlling annealing temperature, PZ thin films showed different microstructures and phase compositions, whose impact of electrical properties and energy storage performance were researched. According to the research findings, the phase composition of film presents a general rule with the decrease of annealing temperature: PZ thin films crystallize into perovskite phase, pyrochlore phase, and amorphous phase. The films annealed at 620 °C crystallized into a state of coexistence of pyrochlore phase and perovskite phases, which also show moderate recoverable energy density and the highest energy storage efficiency (8.7 J cm−3 and 93.1%). This energy storage performance can be attributed to the synergistic effect of high electric breakdown strength of dense pyrochlore phase structure and high maximum polarization of perovskite phase. The findings of this paper help to explain the influence of pyrochlore phase on the energy storge performance of thin films. Thus, it is useful way to improve the energy storage performance of thin films.

show abstract

Section: Introductionmentioning

confidence: 99%

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition

Zheng,

Liu,

Wang

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…In addition, the Pca 2 1 group is non-centrosymmetric, which leads to pyro- and piezo-electric properties. A review of the literature will show many materials attributed to the same space group exhibit piezoelectricity ( Li et al, 2019 ; Silva et al, 2023 ). Altogether, the Bi–N system is highly interesting and will require further investigations.…”

Section: Resultsmentioning

confidence: 99%

High-pressure reactions between the pnictogens: the rediscovery of BiN

Glazyrin,

Aslandukov,

Aslandukova

et al. 2023

Front. Chem.

View full text Add to dashboard Cite

We explore chemical reactions within pnictogens with an example of bismuth and nitrogen under extreme conditions. Understanding chemical reactions between Bi and N, elements representing the first and the last stable elements of the nitrogen group, and the physical properties of their compounds under ambient and high pressure is far from being complete. Here, we report the high-pressure high-temperature synthesis of orthorhombic Pbcn BiN (S.G. #60) from Bi and N2 precursors at pressures above 40 GPa. Using synchrotron single-crystal X-ray diffraction on the polycrystalline sample, we solved and refined the compound’s structure and studied its behavior and compressibility on decompression to ambient pressure. We confirm the stability of Pbcn BiN to pressures as low as 12.5(4) GPa. Below that pressure value, a group–subgroup phase transformation occurs, resulting in the formation of a non-centrosymmetric BiN solid with a space group Pca21 (S.G. #29). We use ab initio calculations to characterize the polymorphs of BiN. They also provide support and explanation for our experimental observations, in particular those corresponding to peculiar Bi–N bond evolution under pressure, resulting in a change in the coordination numbers of Bi and N as a function of pressure within the explored stability field of Pbcn BiN.

show abstract

“…3. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] Fig. 3 also provides some keywords for the enhancement of P r with moderate coercive field (E c ) values (1-2 MV cm À1 ), which can induce large memory windows in non-volatile memory devices such as FeFETs for non-destructive readout operations.…”

Section: Evolution Of Ferroelectric Materials For Non-volatile Memory...mentioning

confidence: 99%

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Jayakrishnan,

Kim,

Hellenbrand

et al. 2024

Mater. Horiz.

Self Cite

View full text Add to dashboard Cite

show abstract

Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films

Cited by 10 publications

References 66 publications

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition

High-pressure reactions between the pnictogens: the rediscovery of BiN

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Contact Info

Product

Resources

About

Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films

Cited by 10 publications

References 66 publications

High energy storage of PbZrO3 antiferroelectric thin films via constructing phase composition

High energy storage of PbZrO3 antiferroelectric thin films via constructing phase composition

High-pressure reactions between the pnictogens: the rediscovery of BiN

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Contact Info

Product

Resources

About

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition

High energy storage of PbZrO₃ antiferroelectric thin films via constructing phase composition