Ferroelectric transition in an epitaxial barium titanate thin film: Raman spectroscopy and x-ray diffraction study

Marssi, M. El; Marrec, F. Le; Luk’yanchuk, I.; Karkut, M.G.

doi:10.1063/1.1596720

Cited by 144 publications

(94 citation statements)

References 36 publications

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“…In the case of BaTiO 3 , the formation mechanism from solution-derived precursor is complicated and has been argued for a long time [24]. Considering the general formation mechanism, it has been reported that BaTiO 3 forms either by a nucleation process at the BaCO 3 /TiO 2 interface or through a decomposition of crystalline Ba 2 Ti 2 O 5 CO 3 intermediate phase [19][20][21][22][23].…”

mentioning

confidence: 99%

Ultrathin barium titanate films by polyol thermal decomposition process

2010

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We have successfully fabricated barium titanate (BaTiO 3 ) films on Si (100) and Pt(111)/Ti/SiO 2 /Si substrates using the polyol thermal decomposition (PTD) process by spin-coating technique. In PTD process, we confirmed that the crystalline oxycarbonate Ba 2 Ti 2 O 5 CO 3 films were directly formed as a consequence of evaporation of polyol precursor solution prepared simply by mixing metal chlorides and ethylene glycol, and then converting them into crystalline BaTiO 3 films through thermal decomposition at [500°C. This feature makes it possible to grow densely packed and crack-free BaTiO 3 films as thin as 70 Å per cycle. Although PTD is described here for a complex metal-oxide film of BaTiO 3 , other simple and complex metal-oxide thin films with high-dielectric constant materials are also likely to be suitable for deposition with accurate control of film thickness and composition using the polyol precursor solutions.Metal-oxide thin films, such as AO and ABO 3 , are important components in a wide array of electronic and optical devices, and their study and manufacture involve major aspects of current science and technology [1]. The ability to deposit and tailor reliable metal-oxide films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. Many different methods are used to make these thin films, such as various physical and chemical vapor depositions mainly dependent on vacuum deposition techniques, and many new techniques have been developed [1][2][3]. However, the use of these vacuum deposition techniques, the high cost of necessary equipment, and restriction of coatings on a relatively small area have limited their potential applications [4]. On the other hand, chemical solution depositions (CSD) such as sol-gel and metallo-organic decomposition (MOD) are more cost-effective, but many metal oxides cannot be deposited, and the control of stoichiometry is not always possible owing to differences in chemical reactivity among the metals [5]. In particular, precise control of film thickness, crystallinity, and morphology are significant problems to be overcome in CSD [6].One of the challenges in solution-based processes of complex metal-oxide films has been to produce high-quality films with desired chemical composition. The sol-gel method among the CSD processes is one of the most important approaches, which are being extensively used for the fabrication of complex oxide thin films. The sol-gel method show attractive advantages due to the fact that films with extremely uniform composition over large areas can be obtained from chemical solution deposition [7]. A key issue of any CSD thin films processing is the chemistry of precursor solution, which governs the properties of the final oxide layer. Even more challenging for sol-gel processing of complex metal-oxides is the identification of a solvent system in which the multiple organometallic precursors are reciprocally compatible. Recently, a few attempts have been reportedly made to ad...

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confidence: 99%

Ultrathin barium titanate films by polyol thermal decomposition process

2010

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“…Although the crystal structure of fully grown nanocrystals appears cubic from x-ray diffraction data, Raman spectroscopy and pair distribution function analysis demonstrate the presence of non-centrosymmetric regions arising from the off-centering of the titanium atoms [53][54][55]. Room temperature polarization switching was also demonstrated down to ∼5 nm in size for individual nanocrystals [56].…”

Section: Dielectric Properties Of Bst/pfa Nanocomposite Thin Filmsmentioning

confidence: 96%

“…Room temperature polarization switching was also demonstrated down to ∼5 nm in size for individual nanocrystals [56]. In terms of eigen-lattice vibrations and Raman active order-disorder of the cubic BT(BST) nanocrystals [15,54,57,58], the dielectric constant of the room temperature cubic phase should be mainly due to the order-disorder feature and its coupling with A1 modes, i.e. c axis dielectric behavior resides in the cubic phase.…”

Section: Dielectric Properties Of Bst/pfa Nanocomposite Thin Filmsmentioning

confidence: 99%

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

et al. 2013

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Due to a typesetting error, an incorrect version of scheme 1 was published in this paper. Please see the corrected scheme 1. Abstract Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba, Sr)TiO 3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm 2 and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba, Sr)

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“…BTO thin films are of significant interest for a variety of technological applications, such as multilayer ceramic capacitors, sensors, actuators, thermistors, dynamic random access memory, and electroluminescent elements [1][2][3]. A variety of methods, such as sputtering, metal organic chemical vapor deposition, pulsed laser deposition, and chemical solution deposition, have been investigated to prepare BTO thin films [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

Koga

et al. 2007

J Electroceram

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The nanoparticles electrophoretic deposition (EPD) of barium titanate (BaTiO 3 or BTO) thin films was investigated. BTO nanocrystallites in a pseudocubic perovskite phase with an average particle size of about 10 nm were synthesized at a low temperature of 90°C by a highconcentration sol-gel process. By using a mixed solvent of 2-methoxyethanol and acetylacetone as dispersing medium, transparent and well-dispersed BTO nanocrystallites suspensions within the concentration range of 0.0125 to 0.20 mol/l was successfully prepared for nanoparticles EPD. A uniform microstructure and a smooth surface were observed on the deposited films. The film thickness of the deposited films increased rapidly with increasing EPD time in the initial period of EPD, and thereafter gradually increased to a limited thickness. With increasing applied EPD voltage, the limited film thickness increased. A near linear relation between the film thickness of films and the concentration of suspensions was observed under the same EPD conditions. The microstructures of the deposited BTO thin films were investigated.

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Ferroelectric transition in an epitaxial barium titanate thin film: Raman spectroscopy and x-ray diffraction study

Cited by 144 publications

References 36 publications

Ultrathin barium titanate films by polyol thermal decomposition process

Ultrathin barium titanate films by polyol thermal decomposition process

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

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