Abstract:Tuning element is essential for the design of tunable and reconfigurable RF circuits. Ferroelectric thin-film integrated capacitor is proposed in this work as the tuning element for MCM-D SiP technology. The proposed ferroelectric capacitors are fabricated on a sapphire substrate. The fabrication process is described. Measurement results show that the capacitance density is about 19 fF/ m 2 at 0-V bias. The tunability of the ferroelectric capacitor reaches 2:1 as the bias voltage is increased from 0 V to 7 V. … Show more
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