Ferroelectric space groups

Литвин, Д. Б.

doi:10.1107/s0108767386099920

Cited by 21 publications

(24 citation statements)

References 3 publications

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“…[9][10][11][12][13][14][15][16][17] However, considering the occurrence of ferroelectricity in Y:HfO 2 thin films, a simple monoclinic=cubic phase mixture or intermediate tetragonal phases seem contradictory, since neither the cubic=tetragonal nor the monoclinic phases in HfO 2 possess ferroelectric space groups. 29 A close examination of the GI-XRD diffractograms presented in Fig. 7 revealed the presence of an orthorhombic phase, whose phase fraction increases against the monoclinic phase until a full stabilization of the cubic phase is reached for high YO 1.5 content.…”

Section: Resultsmentioning

confidence: 99%

Ferroelectricity in yttrium-doped hafnium oxide

Müller

Schröder

Böscke³

et al. 2011

Journal of Applied Physics

585

351

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Structural incommensurate modulation rule in hexagonal Ba(Ti1-xMx)O3-δ (M = Mn, Fe) multiferroics AIP Advances 2, 042129 (2012) Water assisted gate induced temporal surface charge distribution probed by electrostatic force microscopy J. Appl. Phys. 112, 084329 (2012) Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films AIP Advances 2, 042104 (2012) Nanodomain structures formation during polarization reversal in uniform electric field in strontium barium niobate single crystals J. Appl. Phys. 112, 064117 (2012) The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012) Additional information on J. Appl. Phys. Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO 1.5 admixture the remanent polarization peaked at 24 lC=cm 2 with a coercive field of about 1.2 MV=cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO 2 implies high scaling potential for future, ferroelectric memories.

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Section: Resultsmentioning

confidence: 99%

Ferroelectricity in yttrium-doped hafnium oxide

Müller

Schröder

Böscke³

et al. 2011

Journal of Applied Physics

585

351

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“…Even though the crystal structure of MAPbI 3 belongs to the centrosymmetric tetragonal space group I4/mcm, the reorientation of the organic groups and the distortion of the PbI 6 cages can result in a polarization, which is one of the prerequisites for any ferroelectric behavior. [123,124] A second criterion is the ability to switch this polarization by an external field. Several groups, such as Chen et al, [125] Coll et al [126] and Kutes et al, [127] have demonstrated switching of spontaneous polarization, that is a piezoresponse hysteresis loop in both amplitude and phase by using piezoelectric force microscopy (PFM).…”

Section: Ferroelectricitymentioning

confidence: 99%

Capturing the Sun: A Review of the Challenges and Perspectives of Perovskite Solar Cells

Petrus

Schlipf

Cheng

et al. 2017

Advanced Energy Materials

312

201

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following statement: These materials can be processed from solution and yet exhibit optoelectronic materials properties described in classic solid-state physics textbooks. This unprecedented combination has led to photovoltaic devices that can be processed at room temperature and achieve performance levels similar to industry giant polycrystalline silicon, from a starting point of 3.8% in 2009. [1][2][3][4] The first light-emitting electrochemical cells [5] and diodes [6][7][8] have also been introduced recently, leading to tunable light emission spectra and internal quantum efficiencies exceeding 15%.The road towards these achievements has been marked by a constant improvement of perovskite deposition techniques fueled by our increasing understanding of the crystallization processes. The choice of deposition technique, either from solution or vapor, and the composition and order in which precursor species are applied has a great influence on the crystallization kinetics. Here, one can distinguish one-step methods where the perovskite is formed from a precursor mixture dissolved in a common solution, and two-step methods where the inorganic compound is deposited first and transformed to the perovskite phase later by addition of the organic constituents. [9][10][11] Furthermore, many parameters during processing can have an effect on the crystallization mechanism and consequently on film morphology, such as the choice of solvents, concentrations and processing additives that are often not incorporated into the final product. [11][12][13] We discuss this aspect in Section 2, where we focus our attention on the most commonly employed solution-based techniques. Additionally, as for any new technology trying to displace an incumbent technology, higher efficiencies, lower costs, reproducibility, stability, and sustainability are paramount. In particular, reproducibility has been a major challenge in perovskite solar cells from the beginning: small variations in morphology, like crystal size, film roughness, and pinholes can have detrimental effects on photovoltaic performance. [14] On the other hand, current-voltage measurements often showed a hysteresis that is rarely seen in other photovoltaic technologies. [15] These topics are highlighted in Sections 3 and 4. Finally, in Section 5 we discuss the framework for market introduction, such as cost reduction by choosing low-cost charge transport layers, or how the lifetime of perovskite absorbers can be extended by the choice of materials composition.Hybrid metal halide perovskites have become one of the hottest topics in optoelectronic materials research in recent years. Not only have they surpassed everyone's expectations and achieved similar performance as tried and true polycrystalline silicon photovoltaic devices, but they are also finding applications in a variety of different fields, including lighting. The main advantages of hybrid metal halide perovskites are simple processability, compatible with large-scale solution processing such as roll-to-roll printing, a...

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“…The scarcity of such materials stems from the almost mutually exclusive origin of the two orders: magnetism requires partially unfilled d or f electron orbitals, while ferroelectric distortions occur primarily though hybridization with completely empty d shells [3]. Furthermore, the requirement that the crystalline structure has a noncentrosymmetric space group to support ferroelectricity places further restrictions on possible material candidates [6]. Even in those rare cases where both orders exist [7], useful systems require significant magnetoelectric coupling between ferroelectric and magnetic moments that is often found to be quite weak or is significant only at cryogenic temperatures [4].…”

Section: Introductionmentioning

confidence: 99%

Multiferroicity in doped hexagonalLuFeO3

et al. 2015

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The hexagonal phase of LuFeO 3 is a rare example of a multiferroic material possessing a weak ferromagnetic moment, which is predicted to be switchable by an electric field. We stabilize this structure in bulk form though Mn and Sc doping, and determine the complete magnetic and crystallographic structures using neutron-scattering and magnetometry techniques. The ferroelectric P 6 3 cm space group is found to be stable over a wide concentration range, ordering antiferromagnetically with Néel temperatures that smoothly increase following the ratio of c to a (c/a) lattice parameters up to 172 K, the highest found in this class of materials to date. The magnetic structure for a range of temperatures and dopings is consistent with recent studies of high quality epitaxial films of pure hexagonal LuFeO 3 including a ferromagnetic moment parallel to the ferroelectric axis. We propose a mechanism by which room-temperature multiferroicity could be achieved in this class of materials.

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Ferroelectric space groups

Cited by 21 publications

References 3 publications

Ferroelectricity in yttrium-doped hafnium oxide

Ferroelectricity in yttrium-doped hafnium oxide

Capturing the Sun: A Review of the Challenges and Perspectives of Perovskite Solar Cells

Multiferroicity in doped hexagonalLuFeO3

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