Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation

Kale, Sumit; Kondekar, P. N.

doi:10.1016/j.spmi.2015.11.019

Cited by 34 publications

(6 citation statements)

References 10 publications

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“…Moreover, a ferroelectric model from Miller has been implanted to simulate the effects about high dielectric constants, polarization and hysteresis of the ferroelectric material. The remnant polarization of PZT material [21] is taken as 0.4 μC/cm 2 , saturation polarization as 0.5 μC/cm 2 , and critical electrical field as 0.1 MV/cm in the simulation. It is noteworthy that there are different remnant polarization, saturation polarization and critical electrical field for different ferroelectric materials (such as PZT, SBT, Si:HfO 2 ) and ferroelectric materials with different thickness (such as 20, 15, and 10 nm of Si:HfO 2 ) [26] .…”

Section: Resultsmentioning

confidence: 99%

“…To combat the issue of low current driving capability, a number of different technologies have been reported in the literature with gate work function engineering [10] , high-k gate dielectrics engineering [11] , lower bandgap materials employed in source engineering such as germanium (Ge) source [12] and indium arsenide (InAs) source TFETs [13,14] , and some novel structures of TFETs such as gate-all-around triple metal (GAA TM) TFETs [15] , p-n-p-n TFETs [16] , a hetero-junction at the source-channel TFETs [17,18] , a hetero-stacked TFET [19] , electrically doped TFET (ED-TFET) based on polarity control [20] , and so on. Recently, ferroelectric (FE) insulator engineering of TFET has been used due to the fact that the ferroelectric gate dielectric produces a negative capacitance (NC) effect, which leads to the enhanced electric field at the source-channel junction [21][22][23][24] . Therefore, tunneling barrier width for electron injection is reduced.…”

Section: Introductionmentioning

confidence: 99%

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Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

2018

J. Semicond.

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Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor (NC DG TFET) with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel potential profile by solving the Poisson equation with the Landau–Khalatnikov (LK) equation. Moreover, the effects of the channel mobile charges on the potential are also taken into account. We also analyze the dependences of the channel potential and the on-state current on the device parameters by changing the thickness of ferroelectric layer, ferroelectric material and also verify the simulation results accord with commercial TCAD. The results show that the device can obtain better characteristics when the thickness of the ferroelectric layer is larger as it can reduce the shortest tunneling length.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

2018

J. Semicond.

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“…Use of metal source/drain contact holds the advantage, as it commendably minimizes the issue of higher S/D series resistance and lessens the severe limitations imposed on conventionally implanted S/D. Further, intrinsic Schottky potential barrier of SB-MOSFETs results in greater control of OFF-state leakage current, and the subthreshold slope (SS) of SB-MOSFET has a lower limit of 60 mV/dec at room temperature [ 5 , 6 , 7 , 8 , 9 , 10 ]. Features such as low thermal budget requirements, higher invulnerability to short-channel effects, low source/drain (S/D) parasitic resistances, sub-10 nm gate length scalability and simple fabrication steps make Schottky barrier MOSFETs (SB-MOSFETs) a suitable FET biosensor for the detection of different biomolecules [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

“…Sumit Kale et al have demonstrated that dopant segregation (DS) at the source-channel junction aids to increase tunneling area, which results in improved device performance with high ON current [ 20 ]. A ferroelectric SB tunnel FET (Fe SB-TFET) with a highly doped pocket at the source/drain and channel interface and gate–drain underlap reduce tunneling barrier width at the source side SB, resulting in improved device performance with low subthreshold swing (SS), reduced ambipolar current and high I ON /I OFF [ 6 ]. Investigation of temperature’s effect on reliability issues of ferroelectric DS SB TFET reveals that the presence of a ferroelectric layer and the resulting negative capacitance effect increases the ON current, achieves highest I ON /I OFF ratio and reduces the SS to 23 mV/dec at 300 K [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

et al. 2023

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A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET. It has been observed that the proposed device exhibits better performance, with a higher ION/IOFF ratio and lower subthreshold slope. The high-κ dielectric, along with the SiGe pocket region, improves tunneling probability, while aluminum, along with SiO2 at the drain side, broadens the drain/channel Schottky barrier and reduces the hole tunneling probability, resulting in a reduced OFF-state current. Further, the proposed device is used as a biosensor to detect both the charged and neutral biomolecules. Biosensors are made by creating a nanocavity in the dielectric region near the source end of the channel to capture biomolecules. Biomolecules such as streptavidin, biotin, APTES, cellulose and DNA have unique dielectric constants, which modulates the electrical parameters of the device. Different electrical parameters, viz., the electric field, surface potential and drain current, are analyzed for each biomolecule. It has been observed that drain current increases with the dielectric constant of the biomolecules. Furthermore, the sensitivity and selectivity of the proposed biosensors is better than that of conventional biosensors made using double gate Schottky barrier MOSFETs. Sensitivity is almost twice that of a conventional sensor, while selectivity is six to twelve times higher than a conventional one.

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“…However, ambipolarity and lower ON-state current (I ON ) are two major limitations for TFETs [9]. To address these concerns, researchers proposed various device structures such as double-gate, dual material gate, workfunction engineering, material engineering, stacked gate oxide, pocket doping, electrically doped (ED), dielectric pocket, and gate over source overlap, and extended source TFET [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. In addition to the above issues, the reliability issues that arise as a result of ITCs developed at the Si-SiO 2 interface due to variations in process, stress, radiation, and the effect of hot carriers are also major concerns [32][33][34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Impact of Interface Trap Charges and Temperature on the Performance of Extended Source Double Gate TFET

Dharmender

Nigam

Kumar

2022

Preprint

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In this work, we have investigated the reliability of the extended source double gate tunnel field-effect transistor (ESDG-TFET) by considering the effect of the fixed donor (positive) and acceptor (negative) interface trap charges (ITCs) at the silicon-SiO2 interface and temperature variations ranging from 300K to 480K, on the DC, analog/radio frequency (RF), linearity and harmonic distortion performance parameters. A comparative analysis has been performed between conventional stack gate oxide double gate TFET (SGO-DG-TFET) and ESDG-TFET with similar dimensions. Different performance metrics such as transfer characteristics, parasitic capacitances, gain-bandwidth product (GBP), unity gain frequency (fT), transit time, transconductance frequency product (TFP), and linearity distortion performance parameters such as 2nd and 3rd order transconductance coefficients (gm2, gm3), 2nd and 3rd order voltage intercept points (VIP2, VIP3), 3rd order input intercept point, intermodulation distortion parameters (IIP3, IMD3), and 1dB compression point have been investigated. Moreover, 2nd and 3rd order harmonic distortions (HD2, HD3) and total harmonic distortion (THD) are investigated using technology computer-aided design (TCAD) simulations. The Tables 2, 3 and 4 show that in terms of percentage variation, ESDG-TFET exhibits less variation as compared to SGO-DG-TFET, which indicates that the ESDG-TFET is more immune to ITCs and temperature variations. Thus, ESDG-TFET can be used for low power switching and analog/RF and high temperature applications.

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Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation

Cited by 34 publications

References 10 publications

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

Impact of Interface Trap Charges and Temperature on the Performance of Extended Source Double Gate TFET

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