Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

Abstract

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

“…The leakage current density measured was almost two orders of magnitude less in BLFTO. 14 Based on the previous studies, pure BFO showed a leakage current density of $10 À2 A/cm 2 (at 1 V), 25 which is one order higher as compared to the observed value of $10 À3 A/ cm 2 (at 1 V) in our BLFTO film. The dark J-V curve of the BLFTO cell shows a high resistance state, irrespective of the voltage.…”

Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures

“…60,61,70, BFO-based multilayer structures have been shown to promote the desired electrical properties and/or new physical phenomena, 60,61,70,71,77,110, such as a larger remnant polarization, improved magnetoelectric coupling, and photovoltaic behavior. 61,70,[366][367][368][369][370][371][372][373][374][375][376][377][378][379][380][381][382][383][384]772,848,849 Although some of the properties of BFO thin films can be improved by forming the heterostructure, the P r value is often limited to below 60 μC/cm 2 60,70,366-375,377-379,381,383,384 due to the additive layers having lower or even zero P r values. There have been surprisingly large P r values reported for the heterostructure films consisting of BFO and non-ferroelectric layers.…”

Magnetic and Dielectric Properties of BST/BF Multiferroic Ceramic Materials

“…Secondly, the BiFeO 3 bulk material exists the large leakage current since the existence of the mixed valence Fe 2+ /Fe 3+ ions and oxygen vacanvies [11,12]. Thirdly, the BiFeO 3 shows very weak even no ferromagnetism from a near-linear magnetization-magnetic field (M-H) relation [13].…”