Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Mei, Antonio B.; Saremi, Sahar; Miao, Ludi; Barone, Matthew R.; Tang, Yongjian; Zeledon, Cyrus; Schubert, J.; Ralph, Daniel; Martin, Lane W.; Schlom, D. G.

doi:10.1063/1.5125809

Cited by 10 publications

(9 citation statements)

References 44 publications

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“…It is well known that BiFeO 3 is susceptible to defects, which can lead to a leakage current under an applied bias. To minimize the parasitic leakage current, we performed ferroelectric hysteresis loops both at low temperatures and at room temperature after ion bombardment of the sample ( 73 , 74 ), which has previously been shown to substantially reduce the leakage current. Bombardment was performed at Lawrence Berkeley National Laboratory using the Pellatron facility to iridate with a He 2+ ion dose of 1.3 × 10 16 /cm 2 .…”

Section: Methodsmentioning

confidence: 99%

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

et al. 2022

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Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

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Section: Methodsmentioning

confidence: 99%

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

et al. 2022

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“…Defects are, in general, thought to be deleterious to (relaxor) ferroelectrics and are blamed for high leakage currents, aging, and other negative effects (14). Recent studies have shown that defects produced by ion bombardment with high-kinetic energy species can be used to create favorable intrinsic point defects and complexes (e.g., defect dipoles), which can improve ferroelectric/electrical properties or even create novel function (15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25). Both point defects and defect dipoles or complexes can interact with free charge, producing deep-level trap states, or with polarization (biasing, pinning domain walls, etc.)…”

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confidence: 99%

Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films

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Acharya

et al. 2020

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Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.

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“…This could be a key enabling processing approach as we push to integrate such materials into increasing complex device structures that might limit growth to nonideal conditions. In addition to reducing leakage current, which is (of course) favorable for many applications, such defects can also serve as pinning sites for domain walls, [182,194,195] and can lead to an increase in the coercive field which is typically less desirable for applications relying on traditional bipolar switching of a ferroelectric. As understanding of how these ion beams can control ferroelectric properties grew, researchers have now been able to utilize these features which were once considered only deleterious to ferroelectric properties to produce novel functionality.…”

Section: Defect Engineeringmentioning

confidence: 99%

“…The result is controlled defect densities and profiles that leverage the mature field of ion-induced damage in materials. Ion bombardment of BiFeO 3 and PbTiO 3 (Figure 7d) films, deposited by either PLD [182,184] or MBE [194] has been found to create defect complexes and clusters which can reduce the free-carrier transport via the formation of deep trap states in the bandgap. What this means is that it is now possible to "fix" deficient properties in a material after the fact (i.e., after it is grown).…”

Section: Defect Engineeringmentioning

confidence: 99%

Thin‐Film Ferroelectrics

et al. 2022

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non-centrosymmetric structures which can possess a spontaneous electric polarization which can be controlled using applied electric fields (Figure 1). Ferroelectrics themselves are inherently hierarchical materials-wherein picometer ionic displacements give rise to polarization which can collectively extend over millimeters or self-organize into complex mesoscopic structures or collectively reorient under applied stimuli (e.g., electric fields, temperature, or stress). Understanding these complex behaviors necessitates a multilevel approach, wherein atomistic, microscopic, mesoscopic, and macroscopic properties are studied in concert. Parallel advances in synthesis, characterization, and simulation have enabled such multimodal studies and provided a methodology through which a multitude of ferroelectric functionalities can now be achieved and studied.The promise of utilizing these functionalities in a number of applications kick-started the modern era of ferroelectric research in the mid-20th century. [1] Looking further back, in the 1920s, the ability to switch the polarization of sodium potassium tartrate tetrahydrate (commonly known as Rochelle salt) was first observed, along with dielectric and piezoelectric anomalies near the ferroelectric transition-now called the Curie point. In the 1940s, as part of the accelerated research push associated with World War II, ferroelectric BaTiO 3 was discovered by accident. When modifying TiO 2 with BaO to enhance its dielectric properties, a record-high dielectric permittivity was discovered and subsequent studies demonstrated a hysteretic switchable polarization. This discovery ushered in a new understanding of ferroelectricity as more than a rare phenomenon associated with salts that contained hydrogen bonding, but rather as a phenomenon that could exist in simple oxides like perovskites. Over the subsequent decades, the number of ferroelectric compositions exploded, particularly within the perovskite oxides, introducing new chemistries including LiNbO 3 and the PbZr x Ti 1−x O 3 system. Meanwhile, theoretical descriptions of ferroelectricity were advanced through lattice-dynamical models invoking a soft-mode optical phonon. Studies of the piezoelectric, thermodynamic, and optical properties in ferroelectric ceramics allowed for their deployment in a number of applications including piezoelectric sensors and pyroelectric infrared detectors. By the 1960s, increased interest in using ferroelectric polarization for nonvolatile memory was driving research into Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length sc...

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Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Cited by 10 publications

References 44 publications

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films

Thin‐Film Ferroelectrics

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