Ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films prepared on LaNiO3 bottom electrode by sol-gel method

Abstract

The Bi 4 Zr 0.5 Ti 2.5 O 12 (BZT) thin films were fabricated on the LaNiO 3 bottom electrode using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2P r and 2V c of the Pt/BZT/LaNiO 3 capacitor are 28.2 μC/cm 2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×10 10 cycles, the P r value decreases to 87% of its pre-fatigue values. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO 3 structure has a memory effect because of the BZT film's ferroelectric polarization.Bi 4 Zr 0.5 Ti 2.5 O 12 thin film, sol-gel method, LaNiO 3 bottom electrode, ferroelectric properties