Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel method

Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi4−xHoxTi3O12 Thin Films Prepared by Sol–Gel Method

“…But the BTO films show the poor fatigue resistance and unexpectedly low value of P r due to the anisotropic property, which making the BTO films unsuitable for FeRAM devices. Recent reports reveal that the fatigue‐free thin films with excellent ferroelectric properties can be obtained by the substitution of lanthanide ions (including La 3+ , Pr 3+ , Ce 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Dy 3+ , and Gd 3+ ions) for the Bi 3+ ions in the (Bi 2 Ti 3 O 10 ) 2− pseudoperovskite layers of BTO 2,7–16 . The fatigue‐free behavior of lanthanide‐substituted BTO thin films can attribute to the enhanced stability of oxygen in the TiO 6 octahedron cell caused by the substitution of lanthanide ions for Bi 3+ ions located at near the TiO 6 octahedron cell 2 .…”

“…Recent reports reveal that the fatigue-free thin films with excellent ferroelectric properties can be obtained by the substitution of lanthanide ions (including La 31 , Pr 31 , Ce 31 , Nd 31 , Sm 31 , Eu 31 , Dy 31 , and Gd 31 ions) for the Bi 31 ions in the (Bi 2 Ti 3 O 10 ) 2À pseudoperovskite layers of BTO. 2,[7][8][9][10][11][12][13][14][15][16] The fatigue-free behavior of lanthanide-substituted BTO thin films can attribute to the enhanced stability of oxygen in the TiO 6 octahedron cell caused by the substitution of lanthanide ions for Bi 31 ions located at near the TiO 6 octahedron cell. 2 Because the ferroelectricity of BTO is known to originate from a tilting of the TiO 6 octahedron cell from the c axis and a rotation in the a-b plane, the substitution for the Bi 31 ions in the pseudoperovskite layers with the suitable lanthanide trivalent ions has an effect on the shifts of some ions contributing to dipole displacement.…”

Sintering and Characterization of Rare Earth Doped Bismuth Titanate Ceramics Prepared by Soft Combustion Synthesis

“…This technique can be used to prepare the samples in the form of bulk ceramics and thin films. Several factors that need to be considered in a sol-gel synthesis are solvent, precursors, catalyst, pH, additives and mechanical agitation (Du et al, 2007, Guo et al, 2007, Ke et al, 2010. These factors greatly influence the powder size and other properties.…”

Preparation and Ferroelectric Properties of Ho3+/Mo6+ Cosubstituted Bi4Ti3O12 Thin Films by Sol–Gel Method

“…[4][5][6] It was reported that some A-site or B-site substitution in BTO crystal showed large remanent polarizations (P r ). 2,[7][8][9][10][11][12] It was also found that the coercive field (E c ) in the A-site and B-site substituted BTO films became larger. [13][14][15] Our group reported a remarkable improvement of 2P r in the BTO films by adding Ho 3+ ions to the A sites.…”