volume 142, issue 2-3, P135-138 2007
DOI: 10.1016/j.mseb.2007.07.002
View full text
|
Sign up to set email alerts
|
Share

Abstract: The Bi 4 Ti 3 O 12 and Bi 3.25 La 0.75 Ti 3 O 12 thin films were prepared on the Pt/Ti/SiO 2 /Si substrate using the sol-gel method. The microstructure and ferroelectric properties of these films were investigated. Both the Bi 4 Ti 3 O 12 and Bi 3.25 La 0.75 Ti 3 O 12 thin films exhibited typical bismuth-layered perovskite structure and the single perovskite phase was obtained at 550 • C. The structures of Pt/Bi 4 Ti 3 O 12 /Pt and Pt/Bi 3.25 La 0.75 Ti 3 O 12 /Pt were fabricated. The 2Pr value of Bi 3.25 La …

Expand abstract

Search citation statements

Order By: Relevance

Citation Types

0
5
0

Paper Sections

0
0
0
0
0

Publication Types

0
0
0
0

Relationship

0
0

Authors

Journals