Ferroelectric polymer-based artificial synapse for neuromorphic computing

Kim, Sungjun; Heo, Keun; Lee, Sunghun; Seo, Seunghwan; Kim, Hyeongjun; Cho, Jeong‐Ick; Lee, Hyun Kyu; Lee, Kyeong‐Bae; Park, Jin‐Hong

doi:10.1039/d0nh00559b

Cited by 73 publications

(74 citation statements)

References 45 publications

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“…In an ideal synaptic device, both NL and AR factors are zero. [ 48–51 ] As identified in Figure 6a, the NL values of the UVO‐treated WEST (w/UVO) are 0.32 in LTP and −0.55 in LTD, respectively, which are very close to zero compared to those of the untreated WEST 5.91 in LTP and −6.11 in LTD, respectively. In addition, the calculated AR of the UVO‐treated WEST is 0.089, which is 1/10 of that of untreated WEST (0.83).…”

Section: Resultsmentioning

confidence: 74%

Implementation of Synaptic Device Using Ultraviolet Ozone Treated Water‐in‐Bisalt/Polymer Electrolyte‐Gated Transistor

Lee

Jin

et al. 2021

Adv Funct Materials

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Electrolyte-gated transistors (EGTs) have been extensively studied as a next-generation neuromorphic device mimicking the biological ionic flux in synapses. However, its long-term plasticity characteristic lasts only for few seconds because of the rapid self-discharge of electrical double layer. Here, ultraviolet ozone (UVO) treated water-in-bisalt (WiBS)/polymer electrolytegated synaptic transistor (WEST) which excellently implements multiple synaptic functions is proposed. Ultraviolet (UV) light and reactive oxygen radicals generated during UVO treatment form trap sites on the surface of active layer, causing lithium cations in the WiBS/polymer electrolyte to be captured at the electrolyte/active layer interface. The UVO treated WEST shows enhanced nonvolatile memory performance for 10 000 s, up to 1186 times longer than that of the untreated WEST. Also, near-ideal weight update over 10 000 cycle tests with 0.32 and −0.55 nonlinearities of long-term potentiation and depression is acquired with a ten times improved symmetricity. These results confirm that the surface engineering is a key technique for sophisticated ion transport, and demonstrate various applicability of EGTs as a neuromorphic device.

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Section: Resultsmentioning

confidence: 74%

Implementation of Synaptic Device Using Ultraviolet Ozone Treated Water‐in‐Bisalt/Polymer Electrolyte‐Gated Transistor

Lee

Jin

et al. 2021

Adv Funct Materials

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“…Besides, the polarization of the ferroelectric layer will be even stronger via voltage pulse modulation, leading to a much more significant channel conductance change [81]. So far, 2D channel materials have been intensively exploited to build high-performance FeFET to emulate synaptic behaviors by combining with either the conventional ferroelectric gate stack (such as Zr-doped HfO 2 , P(VDF-TrFE), PZT) or the 2D ferroelectrics (such as CIPS and α-In 2 Se 3 ) [81][82][83][84][85][86][87][88][89]. In the following session, we will further review the latest reported three-terminal ferroelectric memory devices based on 2D materials.…”

Section: Three-terminal Devicesmentioning

confidence: 99%

“…Besides, the device could still exhibit synaptic behavior after 10 7 cycles of stimulation, though degradation is observed in depression owing to the increasing negative coercive voltage (figure 8(c)). Following the discovery of high-performance P(VDF-TrFE)/MoS 2 -based single synaptic transistor, Kim et al further systematically studied the influence of formation temperature of P(VDF-TrFE) and metal contacts on the training and recognition tasks via MNIST datasets [81]. Specifically, the dataset included 10 categories of items and was built up by training/test images, in which each image has 784 pixels.…”

Section: P(vdf-trfe) and 2d Materials-based Three-terminal Devicesmentioning

confidence: 99%

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Chen

Pam

et al. 2022

Neuromorph. Comput. Eng.

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Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interests in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor (CMOS) technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review highlights the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to-date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.

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“…Recent reports showed the promising behavior of polymer FE P(VDF‐TrFE)‐based electronic synapses and neurons, operating at nanosecond timescales. [ 63–67 ] However, before converting them to a technologically matured solution, more research needs to be done, especially at the memory array level. For the doped‐HfO 2 based FE memories, majority of reported materials and devices employed a high‐temperature rapid thermal annealing to attain the noncentrosymmetric orthorhombic polar phase.…”

Section: Fe Memoriesmentioning

confidence: 99%

“…However, instead of an identical pulse scheme, an incremental pulse scheme is used to achieve this accuracy. Kim et al [ 67 ] studied the influence of the FE properties and contact barrier heights in the FeFET synapses based on P(VDF‐TrFE) on the training and recognition performance of a multilayer perceptron (MLP)‐based neural network ( Figure ). Two different datasets from the MNIST database, i.e., the fashion and handwritten digits, were used for the training and inference tasks.…”

Section: Application In Neuromorphic Architecturesmentioning

confidence: 99%

Back‐End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing

Majumdar

2021

Advanced Intelligent Systems

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Development of unconventional computing architectures, including neuromorphic computing, relies heavily on novel devices with properly engineered properties. This requires exploration of new functional materials and their designed interfaces. Ferroelectric memories including two‐terminal ferroelectric tunnel junctions and three‐terminal ferroelectric field‐effect transistors have shown promising performances in recent years as analog, multibit memory components with ultralow power consumption. However, for ferroelectric memory technology to become a mainstream technology, CMOS integration of these components is of major importance. For further diversifying their application to edge computing and smart sensing industry, a vast unchartered territory of low‐temperature processable and CMOS back‐end‐of‐line (BEOL) compatible materials needs to be researched. In recent years, doped HfO2‐based memory devices and in‐memory computing architectures have gathered huge momentum as one of the “beyond von Neumann” computing alternatives. In comparison, molecular ferroelectric‐based systems are still in their early exploratory phase. This review discusses the potential for doped HfO2 and molecular ferroelectrics as CMOS BEOL and flexible and wearable platform compatible neuromorphic devices and circuits and the challenges that need to be overcome for turning the opportunities to a technological reality.

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Ferroelectric polymer-based artificial synapse for neuromorphic computing

Abstract: Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.

Cited by 73 publications

References 45 publications

Implementation of Synaptic Device Using Ultraviolet Ozone Treated Water‐in‐Bisalt/Polymer Electrolyte‐Gated Transistor

Implementation of Synaptic Device Using Ultraviolet Ozone Treated Water‐in‐Bisalt/Polymer Electrolyte‐Gated Transistor

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Back‐End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing

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